N离子注入改性SnO<sub>2</sub>缓冲层及其CdTe太阳电池应用<sup>*</sup>

doi:10.11896/j.issn.1005-023X.2017.017.022

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Abstract SnO₂ thin films with thickness about 30 nm were prepared by RF magnetron sputtering and implanted with N ions by ion implantation technique, which were applied in CdTe solar cells as buffer layers. The results show that after N ions implantation, transmittance of SnO₂ buffer layer is around 1—3 percentage points lower than FTO in 300—800 nm range, but sheet resistance is obviously increased, especially for sample with 10 min N ions implantation, of which surface morphology is cellular and shows many hollows, and the surface morphology of CdS layers has also changed. The results of Kelvin probe show that work function of SnO₂ buffer layers increase with implantation time of N ions, whose maximum value is 5.075 eV and is 0.15 eV larger than intrinsic SnO₂ buffer layer. The results of X-ray photoelectron spectroscopy show that after 10 min N ions implantation, the bind energy of N_1s become lower than intrinsic SnO₂ buffer layer, but both the bind enegy of O_1s and the concentration of oxygen in non-stoichiometric oxides in the surface region are increased. The results of CdTe solar cells show that efficiency increases from 10.76% to 12.47% after N ions implantation, open circuit voltage increases from about 750 mV to above 790 mV, and the uniformity is also improved.

Key words： N ions implantation SnO₂ buffer layer atomic force microscope X-ray photoelectron spectroscopy CdTe solar cell

Published: 10 September 2017 Online: 2018-05-07

CLC number:	TB34
	O475

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	Articles by authors
	LIU Yuan
	TANG Peng
	ZHANG Jingquan
	WU Lili
	LI Wei
	WANG Wenwu
	FENG Lianghuan

Cite this article:

LIU Yuan,TANG Peng,ZHANG Jingquan, et al. SnO₂ Buffer Layer with N Ions Implantation and Its Application in CdTe Solar Cells[J]. Materials Reports, 2017, 31(17): 152-157.

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https://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2017.017.022 OR https://www.mater-rep.com/EN/Y2017/V31/I17/152

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