| INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
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| Rechargeable Photodetector Based on WS2-Q2DEG Heterojunction |
| WANG Yun1,†, LI Fan1,†, DAI Chengmin1,2, LI Huishu3, ZHAO Run1,2,*, JIANG Yucheng1,2
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1 Key Laboratory of Intelligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, Jiangsu, China
2 Advanced Technology Research Institute of Taihu Photon Center, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, Jiangsu, China
3 School of Information Technology, Suzhou Institute of Trade & Commerce, Suzhou 215009, Jiangsu, China |
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Abstract This study presents a rechargeable photodetector based on a WS2/quasi-two-dimensional electron gas (Q2DEG) van der Waals heterostructure. The device is fabricated on a SrTiO3 (STO) substrate using an argon ion beam bombardment assisted (AIBA) process to form a lateral heterojunction, which facilitates efficient storage and released photogenerated carriers. Following a single illumination, the device demonstrates a photocurrent as high as 0.1 mA and can retain carriers for up to 5 days under dark conditions with applied bias. The current ratio achieves 105 before and after full charging, significantly superior to the continuous illumination modes. The device exhibits remarkable rechargeable photoconductivity (CPC) effects, with the critical temperature for carrier storage increasing to 100 K approximately 20 K higher than in existing systems. This enhancement is attributed to the long carrier lifetime within the space-charge region (SCR), which effectively prevents spontaneous recombination. Furthermore, the broad spectral response ranges from 405 nm to 1 064 nm, breaking the wavelength limitations typically seen in WS2based devices. And the highest charge storage density can be observed under 405 nm laser excitation. Additional investigation reveals the charge sto-rage capacity improves with increasing magnetic field (from -7 T to 7 T), while quasi-one-dimensional effect at the heterojunction interface enhances the electrical performance of the device. By integrating photonic conversion and energy storage functionalities, this innovative device offers promising prospects for next-generation photodetectors and quantum information technologies.
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Published:
Online: 2026-02-13
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Corresponding Authors:
zr@usts.edu.cn
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2026, Vol. 40 
