退火工艺下氧化铟锡薄膜光电性能退化规律研究

doi:10.11896/cldb.25040220

Abstract
Figure/Table
References
Related Citation (15)

Download:

Full Text ( PDF ) (12262KB)
Export: BibTeX | EndNote (RIS)

Abstract Indium tin oxide (ITO) films play an extremely important role as transparent electrodes in the field of optoelectronics. This paper investigates the degradation behavior of the photoelectric properties of ITO thin films under annealing is investigated from an experimental point of view, with a focus on analyzing the internal mechanism of annealing temperature on the degradation of ITO thin film optoelectronic properties from the perspectives of element state and surface morphology. In this study, ITO films were prepared by DC magnetron sputtering on ordinary transparent glass and characterized by means of high-resolution X-ray diffractometry (HRXRD), UV-visible spectroscopy, four-probe test, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). The results showed that compared to unannealed samples, the transmittance at 618 nm decreased by 4.83% at 250 ℃ in the low-temperature range (50, 100, 200, 250 ℃), with electrical properties remaining largely unchanged. At high temperatures (300, 500, 700, 800 ℃), the transmittance at 618 nm decreased by 13.29% at 700 ℃ and 50.28% at 800 ℃ compared to the unannealed state. Electrical properties exhibited significant degradation beyond 500 ℃, with surface resistance increasing by 533.21% at 700 ℃ compared to the unannealed state. It was found that increase in the number of oxygen vacancies induced by decreasing transmittance was consistent with the increase of annealing temperature. At the same time, the degradation of surface morphology and electrical pro-perties of ITO thin films were consistent. Therefore, the increase of oxygen vacancies and the deterioration of surface morphology in ITO thin films degraded their optoelectronic properties. This study helps to reveal the laws affecting the optoelectronic properties of ITO thin films under the annealing process, and provides an experimental basis for the preparation of high-quality ITO thin film electrodes.

Key words： ITO film annealing photoelectric property oxygen vacancy

Published: 25 April 2026 Online: 2026-05-06

CLC number:

O484

	Service
	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors
	LIU Zhenhua
	WANG Yixin
	MEI Yunjian
	SHAN Hengsheng

Cite this article:

LIU Zhenhua,WANG Yixin,MEI Yunjian, et al. Study on Photoelectric Degradation of ITO Film Under Annealing[J]. Materials Reports, 2026, 40(8): 25040220-6.

URL:

https://www.mater-rep.com/EN/10.11896/cldb.25040220 OR https://www.mater-rep.com/EN/Y2026/V40/I8/25040220

1 Wang S H, Hsiao Y J, Fang T H, et al. Microsystem Technologies, 2014, 20, 1181.
2 Ollotu E R, Nyarige J S, Mlyuka N R, et al. Journal of Materials Science Materials in Electronics, 2020, 31(19), 16406.
3 Cai X Y, Wang X W, Zhang Y P, et al. Acta Physica Sinica, 2018, 67(18), 180201(in Chinese).
蔡昕旸, 王新伟, 张玉苹, 等. 物理学报, 2018, 67(18), 180201.
4 Yang S, Sun B, Liu Y, et al. Ceramics International, 2020, 46(5), 6342.
5 Zhang J, Jia X, Lian D, et al. Applied Surface Science, 2021, 542, 148555.
6 Djeffal F, Ferhati H, Benhaya A, et al. Superlattices and Microstructures, 2019, 128, 382.
7 Dang M T, Lefebvre J, Wuest J D. ACS Sustainable Chemistry & Engineering, 2015, 3(12), 3373.
8 Wang T, Lu K, Xu Z, et al. Crystals, 2021, 11(5), 511.
9 Park J H, Seok H J, Jung S H, et al. Ceramics International, 2021, 47(3), 3149.
10 Liu Y J, Huang C C, Chen T Y, et al. IEEE Photonics Technology Letters, 2011, 23(15), 1037.
11 Lin C W, Chen H I, Chen T Y, et al. IEEE Transactions on Electronic Devices, 2011, 58(12), 4407.
12 de Cesare G, Caputo D, Tucci M. IEEE Electronic Device Letters, 2012, 33(3), 327.
13 Cheng C W, Lin C Y. Applied Surface Science, 2014, 314, 215.
14 Janarthanan B, Thirunavukkarasu C, Maruthamuthu S, et al. Journal of Molecular Structure, 2021, 1241, 130606.
15 Stranak V, Bogdanowicz R, Sezemsky P, et al. Surface and Coatings Technology, 2018, 335, 126.
16 Ali A H, Hassan Z, Shuhaimi A. Applied Surface Science, 2018, 443, 544.
17 Kim J, Shrestha S, Souri M, et al. Scientific Reports, 2020, 10(1), 12486.
18 Watson J, Castro G. Journal of Materials Science Materials in Electronics, 2015, 26, 9226.
19 Kato K, Omoto H, Tomioka T, et al. Applied Surface Science, 2011, 257(21), 9207.
20 Song S, Yang T, Liu J, et al. Applied Surface Science, 2011, 257(16), 7061.
21 Chen Y, Jiang H, Jiang S, et al. Acta Metallurgica Sinica (English Letters), 2014, 27, 368.
22 Physica E, Low-dimensional Systems and Nanostructures, 2007, 39(1), 69.
23 Hong S J, Kim J W, Han J I. Current Applied Physics, 2011, 11(1), S202.
24 Jiang H, Zhou Y R, Liu F Z, et al. Acta Physica Sinica, 2016, 65(9), 097801. (in Chinese)
蒋行, 周玉荣, 刘丰珍, 等. 物理学报, 2016, 65(9), 097801.
25 Ghosh S, Dev B N. Applied Surface Science, 2018, 439, 891.
26 Barraud L, Holman Z C, Badel N, et al. Solar Energy Materials and Solar Cells, 2013, 115, 151.
27 Kim H, Horwitz J S. Journal of Applied Physics, 2000, 88(10), 6021.