基于磁畴壁挤压效应的斯格明子湮灭器

doi:10.11896/cldb.25020089

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Abstract Magnetic skyrmions characterized by topologically protected spin configurations have attracted significant attention in spintronics due to their nanoscale dimensions, stability across various conditions and low current thresholds for motion. These properties render skyrmions promi-sing candidates for applications in magnetic memory, logic circuits, and advanced spintronic devices. However, achieving precise control over skyrmion behaviors, including their creation, manipulation, and annihilation, remains a crucial challenge for ensuring the reliable operation of skyrmion-based technologies. In particular, the prompt and efficient annihilation of skyrmions after their utilization as digital signals is essential for preventing interference and preserving data integrity in communication devices. In this study, a novel approach to skyrmion annihilation based on the squeezing effect induced by magnetic domain walls is proposed and investigated through micromagnetic simulations. By controlling the repulsive interactions between skyrmions and magnetic domain walls, the effective annihilation of individual skyrmions and skyrmion chains can be rea-lized. The simulation results demonstrate that spin-polarized current density and magnetic field strength significantly influence the annihilation efficiency of skyrmions. Under a constant current density, increased magnetic field strength notably reduces annihilation time and enhances the number of annihilated skyrmions. Conversely, under fixed magnetic fields, the effect of current density varies according to the magnitude of the magnetic field:at lower magnetic fields, current density substantially influences annihilation time, whereas at higher magnetic fields, its primary impact is observed on the number of skyrmions annihilated. These findings elucidate the dynamic mechanisms underlying skyrmion annihilation, providing theoretical insights into the effective control of skyrmion behaviors. Investigating skyrmion annihilation mechanisms holds significant implications for advancing spintronics. This study addresses the critical challenges associated with efficient skyrmion removal, thereby contributing to the development of reliable, high-performance skyrmion-based devices. Furthermore, the proposed method enhances the precision of skyrmion manipulation and presents a viable pathway for designing next-generation spintronic systems with optimized functionality.

Key words： skyrmion magnetic domain wall squeezing effect micromagnetic simulation

Published: 25 February 2026 Online: 2026-02-13

CLC number:

O469

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	Articles by authors
	ZHANG Xuefeng
	LIU Rui
	AI Xiaolin
	LIU Xin
	MA Xiaoping
	LI Huiting
	JIN Xingri
	PIAO Hongguang

Cite this article:

ZHANG Xuefeng,LIU Rui,AI Xiaolin, et al. Skyrmion Annihilator Based on Magnetic Domain Wall Squeezing Effect[J]. Materials Reports, 2026, 40(4): 25020089-5.

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https://www.mater-rep.com/EN/10.11896/cldb.25020089 OR https://www.mater-rep.com/EN/Y2026/V40/I4/25020089

1 Fert A, Cros V, Sampaio J. Nature Nanotechnology, 2013, 8, 152.
2 Mühlbauer S, Binz B, Jonietz F, et al. Science, 2009, 323, 915.
3 Yu X Z, Onose Y, Kanazawa N, et al. Nature, 2010, 465, 901.
4 Heinze S, von Bergmann K, Menzel M, et al. Nature Physics, 2011, 7, 713.
5 Romming N, Kubetzka A, Hanneken C, et al. Physical Review Letters, 2015, 114, 177203.
6 Jiang W J, Zhang X C, Yu G Q, et al. Nature Physics, 2017, 13, 162.
7 Woo S, Song K M, Zhang X C, et al. Nature Communication, 2018, 9, 959.
8 Barker J, Tretiakov O A. Physical Review Letters, 2016, 116, 147203.
9 Zhang X C, Zhou Y, Ezawa M. Scientific Reports, 2016, 6, 24795.
10 Seki S, Yu X Z, Ishiwata S, et al. Science, 2012, 336, 198.
11 Nahas Y, Prokhorenko S, Louis L, et al. Nature Communications, 2015, 6, 8542.
12 Xing X J, Pong P W T, Zhou Y. Physical Review B, 2016, 94, 054408.
13 Nagaosa N, Tokura Y. Nature Nanotechnology, 2013, 8, 899.
14 Bogdanov A N, Panagopoulos C. Nature Reviews Physics. 2020, 2, 492.
15 Göbel B, Mertig I, Tretiakov O A. Physics Reports, 2021, 895, 1.
16 Wang X S, Yuan H Y, Wang X R. Communications Physics, 2018, 1, 31.
17 Wu H T, Hu X C, Jing K Y, et al. Communications Physics, 2021, 210, 5212.
18 Tan A K C, Ho P, Lourembam J, et al. Nature Communications, 2021, 12, 4252.
19 Everschor S K, Masell J, Reeve R M, et al. Journal of Applied Physics, 2018, 124, 240901.
20 Sampaio J, Cros V, Rohart S, et al. Nature Nanotechnology, 2013, 8, 839.
21 Parkin S S P, Hayashi M, Thoms L. Science, 2008, 320, 190.
22 Liang X, Zhao L, Qiu L, et al. Acta Physica Sinica, 2018, 67(13) 137510 (in Chinese).
梁雪, 赵莉, 邱雷, 等. 物理学报, 2018, 67(13), 137510.
23 Tomasello R, Martinez E, Zivieri R, et al. Scientific Reports, 2014, 4, 6784.
24 Zhang X C, Zhao G P, Fangohr H, et al. Scientific Reports, 2015, 5, 7643.
25 Zhang X C, Ezawa M, Zhou Y. Scientific Reports, 2015, 5, 1.
26 Chen Y, Xing X. IEEE Transactions on Magnetics, 2024, 60, 1.
27 Luo S, Song M, Shen M, et al. Journal of Magnetism and Magnetic Materials, 2020, 494, 165739.
28 Song M, Park M G, Ko S, et al. IEEE Transactions on Electron Devices, 2021, 68, 1939.
29 Zhang X C, Zhou Y, Ezawa M, et al. Scientific Reports, 2015, 5, 11369.
30 Lin S Z, Reichhardt C, Batista C D, et al. Physical Review B, 2013, 88, 019901.
31 Zhang X C, Zhou Y, Ezawa M. Nature Communications, 2016, 7, 10293.
32 Liu Y, Yin G, Zang J, et al. Applied Physics Letters, 2015, 107, 152411.
33 Ma X P, Ai X L, Yang X X, et al. Journal of Magnetism and Magnetic Materials, 2023, 581, 170665.
34 Yang X X, Ai X L, Liu X, et al. Applied Physics Letter, 2024, 125, 172403.
35 Romming N, Hanneken C, Menzel M, et al. Science, 2013, 341, 636.
36 Kalin J, Sievers S, Schumacher H W, et al. Physical Review Applied, 2024, 21, 034065.
37 Bryan M T, Schrefl T, Atkinson D, et al. Journal of Applied Physics, 2008, 103, 073906.
38 Djuhana D, Piao H G, Yu S C, et al. Journal of Applied Physics, 2009, 106, 103926.
39 Song M, Moon K W, Yang S H, et al. Applied Physics Express, 2020, 13, 063002.
40 Yoo M W, Cros V, Kim J V. Physical Review B, 2017, 95, 184423.
41 Xing X, Zhou Y. Communications Physics, 2022, 5, 241.
42 Xing X, Åkerman J, Zhou Y. Physical Review B, 2020, 101, 214432.
43 Vansteenkiste A, Leliaert J, Dvornik M, et al. AIP Advances, 2014, 4, 107133.
44 Iwasaki J, Mochizuki M, Nagaosa N. Nature Communications, 2013, 4, 1463.
45 Jiang W, Xia J, Zhang X, et al. IEEE Magnetics Letters, 2018, 9, 1.
46 Iwasaki J, Mochizuki M, Nagaosa N. Nature Nanotechnology, 2013, 8, 742.
47 Ai X L, Li H T, Zhang X F, et al. Chinese Physics B, 2024, 33, 107502.
48 Chen J, Hu J, Yu H. ACS Nano, 2021, 15, 4372.
49 Lucassen M E, van Driel H J, Smith C M, et al. Physical Review B, 2009, 79, 224411.
50 Yuan H Y, Wang X R. Physical Review B, 2014, 89, 054423.