钆掺杂的高非线性和低漏流SnO<sub>2</sub>基压敏电阻材料

doi:10.11896/cldb.23110256

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Abstract By introducing Gd into the SnO₂-Co₃O₄-Cr₂O₃-Ta₂O₅system, this work prepared a SnO₂ varistor ceramic material with a high nonlinear coefficient and low leakage current. The results show that the doping of Gd can promote grain growth, reduce the porosity of the sample, and obtain the best electrical performance when the doping amount is 0.25mol%, with a nonlinear coefficient reaching 55 and a leakage current as low as 7.74 mA/cm². At the same time, the voltage gradient is also as high as 568 V/mm, and the dielectric constant is as high as 213 at a frequency of 50 Hz, showing its potential application prospects. However, oversaturated doping will deteriorate the electrical properties of varistor ceramics. We attribute the change in the nonlinear coefficient to the improvement of the grain boundary barrier. The decrease in leakage current is caused by the increase in grain boundary resistance and the decrease in electron mobility. The reason for the increase in grain boundary barrier was analyzed from the perspective of point defects, and the influence mechanism of Gd doping on the electrical properties and microstructure of SnO₂ varistor ceramics was systematically explained.

Key words： SnO₂ varistor nonlinear coefficient leakage current barrier point defects

Published: 25 January 2025 Online: 2025-01-21

CLC number:

TM283

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	Articles by authors
	SUN Fei
	ZHAO Hongfeng
	MIAO Kui

Cite this article:

SUN Fei,ZHAO Hongfeng,MIAO Kui. Gadolinium-doped SnO₂-based Varistor Materials with High Nonlinear Coefficient and Low Leakage Current[J]. Materials Reports, 2025, 39(2): 23110256-4.

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https://www.mater-rep.com/EN/10.11896/cldb.23110256 OR https://www.mater-rep.com/EN/Y2025/V39/I2/23110256

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