| INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
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| Preparation Process of the Single Crystal Graphene with Different Sizes by Chemical Vapor Deposition |
| WANG Yanwei1,2, LU Wei'er1,3,4, YAN Meiju1,2, XIA Yang1,3,4,5
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1 Microelectronic Instrument and Equipment Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 School of Science, Beijing Jiaotong University, Beijing 100044, China;
3 Beijing Research Center of Engineering and Technology of Instrument and Equipment for Microelectronics Fabrication, Beijing 100029, China;
4 Beijing Key Laboratory of IC Test Technology, Beijing 100029, China;
5 University of Chinese Academy of Sciences, Beijing 101407, China |
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Abstract Preparation and properties of the single crystal graphene with different sizes on the copper substrates have been investigated. The effects of copper substrate pretreatment method, gas flow rate, pressure and growth time on the size and surface morphology of single crystal graphene were compared. Ar and O2 pretreatment can reduce graphene nucleation density, and appropriate CH4 concentration facilitates the growth of single crystal graphene. The chamber vacuum could modulate the morphology of single crystal graphene and the growth time decides the graphene sizes. By adjusting the parameters of pretreatment gas and flow rate, growth pressure and time, a reliable preparation process of single crystal graphene with the sizes between 0.01—6 mm has been obtained. The single crystal graphene with the size of 6 mm was prepared under the conditions of 101.325 kPa, Ar and O2 pretreatment, 1 068 ℃, 600 sccm H2 and 25 sccm CH4. In addition, the formation mechanism of impurity particles during the graphene preparation process has also been studied. It might be due to that the oxidation of the copper substrate and the Si atoms fell off from the quartz tube during the high temperature. The reliable preparation of single-crystal graphene of different size could open up broad prospect for the application of new graphene electronic devices.
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Published: 12 March 2020
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| Fund:This work was financially supported by the Young Scientists Fund of the National Natural Science Foundation of China (61604175),the National Natural Science Foundation of China (61427901). |
| About author:: Yanwei Wang, a graduate student at Beijing Jiaotong University in September 2017. From March 2018 to March 2019, he co-educated and learned at the Institute of Microelectronics (CAS), focusing on the research of two-dimensional materials and optical components; Wei'er Lureceived her Ph.D. degree in materials from Institute of Physics and Chemistry (CAS) in 2012. She is currently an associate professor in Institute of Microelectrics (CAS) and participates in the development of film deposition equipment and technology. Her research interests are preparation of nanofilms, two-dimensional materials and devices. |
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2020, Vol. 34 
