电子束热处理快速制备石墨烯技术

doi:10.11896/cldb.19030126

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Abstract Based on the segregation mechanism of carbon atoms in metal materials, the preparation of graphene by heat treatment of carbon-doped nickel film required a very fast heating and cooling rate. The characteristic of electron beam annealing was that the heating rate was very fast, and the sample could be heated to the required temperature in a short time. Therefore, an electron beam annealing method was proposed to prepare graphene. The nickel film doped with a certain concentration of carbon atoms was heated in the electron beam heat treatment equipment at a certain temperature. When the concentration of carbon atom was 1%, the temperature range of preparing graphene by electron beam annealing method was determined to be 1 000—1 100 ℃, and only 5 s was needed to obtain high-quality graphene with good crystallinity and few defects. The segregation mechanism of carbon atoms in nickel film under the irradiation of electron beam was revealed. The high heating and cooling rate made the residence duration of Ni-C system in Ni-multilayer graphene and Ni-graphite phase interval very short, and the excess carbon atoms on the surface of nickel film were very few, thus forming high-quality single-layer graphene. The method of preparing graphene by electron beam annealing method had the advantages of high efficiency and safety, and improved the application advantages of graphene.

Key words： graphene electron beam rapid annealing carbon segregation polycrystalline Ni film

Published: 12 March 2020

CLC number:

O647

Fund:This work was financially supported by 100 Talents Program of the Chinese Academy of Sciences.

About author:: Zhuang Xugraduated from Lanzhou University in June 2017 with a doctorate degree. Since 2017, he has worked in the post-doctoral mobile station of the Institute of Electrical Engineering, Chinese Academy of Scie-nces. His main research direction is the application of electron beam in the field of materials; Zhaoshun Gaois a researcher at the Institute of Electrical Engineering, Chinese Academy of Sciences. He graduated from the Institute of Electrical Engineering of the Chinese Academy of Sciences in 2009 with a PhD in Engineering. He was elected to the "100 Talents Program" of the Chinese Academy of Sciences in 2018. He has been engaged in the research of new electrical materials for a long time. At present, he is mainly committed to improving the conductivity of conventional copper and aluminium through carbon nano-doping and nano-technology.

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	XU Zhuang
	GAO Zhaoshun
	HAN Li
	ZUO Tingting
	WU Yue
	XIAO Liye
	KONG Xiangdong

Cite this article:

XU Zhuang,GAO Zhaoshun,HAN Li, et al. Preparation of Graphene by Rapid Electron Beam Annealing Method[J]. Materials Reports, 2020, 34(6): 6006-6009.

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http://www.mater-rep.com/EN/10.11896/cldb.19030126 OR http://www.mater-rep.com/EN/Y2020/V34/I6/6006

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