SiO<sub>2</sub>基底Nb原位掺杂MoS<sub>2</sub>纳米薄膜的制备及场效应

doi:10.11896/cldb.18040132

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Abstract In this study, large-area growth of Nb-MoS₂ layers on SiO₂ substrates using one-pot chemical vapor deposition via two steps was successfully achieved. For the first time, a facile, cost-effective and mass-scalable direct synthesis approach was designed for doping Nb into MoS₂ layers using MoO₃, sulfur (S) and NbCl₅ as precursors. The proposed process allowed retaining the uniformity of large area thin layers which are sui-table for device fabrication. The structural and optical properties of the resulting Nb-MoS₂ layers were systematically investigated. Scanning electron microscope (SEM), atomic force microscope (AFM), Raman, photoluminescence (PL) spectra and X-ray photoelectron spectroscopy (XPS) analyses confirmed the formation of continuous and crystalline few-layers MoS₂ and Nb-MoS₂. An obvious blue-shift of up to 90 meV in photoluminescence peaks was observed for samples with different grain sizes. The electrical properties of the as-prepared materials were evaluated by bottom-gate FETs. A field-effect mobility of 1.22 cm²·V^-1·s^-1 and a current on/off ratio of 10⁵ were obtained. In particular, Nb-MoS₂ prepared by Nb doping greatly reduced the resistance of the film to 66.67 kΩ. These findings provide a novel route towards scaled-up synthesis of high-quality few-layered MoS₂ by transition-metal doping in TMDCs which are suitable for electronic and optoelectronic devices.

Key words： two-dimensional films transition-metal dichalcogenides chemical vapor deposition (CVD) Raman spectroscopy photoluminescence spectrum field effect transistor

Published: 31 May 2019

CLC number:

TB34

Fund:This work was financially supported by the National Natural Science Foundation of China (21176031), Fundamental Research Funds for the Central Universities (591310829172201, 310829172202, 310829175001, 310829165027).

About author:: Yukun Sunreceived his B.S. and M.S. degrees from Chang’an University. He is now pursuing his Ph.D. degree in environmental engineering at School of Environmental Science and Engineering, Chang’an University. His research interests are focused on the themes of 2D materials and synthesize the new photocatatytic materials, such as to synthesize new few layer 2D materials using an advanced chemical vapor deposition (CVD) technique, to fabricate heterostructures from the synthesized 2D materials, to analyze the newly grown 2D materials, and to explore the electronic and structural properties of the 2D materials-based devices.Bo Baiobtained his Ph.D. degree in chemical engineering from Xian Jiaotong University in 2003. He joined School of Environment Science and Engineering, Chang’an University in 2004. From 2009 to 2011, he visited a scholar at University of Nottingham. Afterward, he obtained postdoctoral degree in Chang’an University successfully. His research interests include the synthesis of nanocomposites and their photocatalytic application of degradation pollutants in sewage.

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	SUN Yukun
	BAI Bo
	MA Meiling
	WANG Honglun
	SUO Yourui
	XIE Liming
	CHAI Zhen

Cite this article:

SUN Yukun,BAI Bo,MA Meiling, et al. Preparation and Field-effect Mobility of Nb Doped MoS₂ Nano-filmson SiO₂ Substrate[J]. Materials Reports, 2019, 33(12): 1975-1982.

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http://www.mater-rep.com/EN/10.11896/cldb.18040132 OR http://www.mater-rep.com/EN/Y2019/V33/I12/1975

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