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材料导报  2026, Vol. 40 Issue (8): 25080120-5    https://doi.org/10.11896/cldb.25080120
  金属与金属基复合材料 |
Ta/Co2FeSi/MgAl2O4/Pt多层膜系垂直磁各向异性研究
王尚前, 章超凡, 韩忠豪, 刘剑, 王可*
东华理工大学电子与电气工程学院,南昌 330013
Study on Perpendicular Magnetic Anisotropy of Ta/Co2FeSi/MgAl2O4/Pt Multilayer Films
WANG Shangqian, ZHANG Chaofan, HAN Zhonghao, LIU Jian, WANG Ke*
School of Electronic and Electrical Engineering, East China University of Technology, Nanchang 330013, China
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摘要 针对传统CoFeB/MgO磁隧道结体系自旋极化率有限、界面缺陷较多和厚度敏感性强等问题,选用理论上自旋极化率接近100%、居里温度高的Co2FeSi(CFS)Heusler合金以及与其晶格高度匹配的MgAl2O4(MAO)氧化物,并以Ta作为缓冲层,构建了Ta/CFS/MAO/Pt结构的多层膜,系统研究了CFS、MAO、Ta各层的厚度与退火温度对垂直磁各向异性(PMA)及相关磁性能的调控作用。结果表明:CFS层厚度为4 nm时可获得强PMA(Keff=4.7×105 erg/cm3);MAO层的最佳氧化界面受厚度和退火温度协同控制,随着厚度增加,最优退火温度相应升高,因此,适度加厚MAO层可有效抑制高温退火导致的PMA劣化;插入4 nm的Ta缓冲层能显著提升PMA,使得薄膜Keff高达6.42×105 erg/cm3,与Pt为缓冲层的方案相比,不仅显著增强了PMA,还扩大了工艺窗口并降低了材料成本。本工作为高性能自旋电子器件的材料设计及界面工程提供了实验基础和技术路径。
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王尚前
章超凡
韩忠豪
刘剑
王可
关键词:  垂直磁各向异性  Co2FeSi  MgAl2O4  剩磁比    
Abstract: To address the limitations associated with conventional magnetic tunnel junctions such as limited spin polarization, interfacial defects, and thickness sensitivity, we devised a Ta/Co2FeSi (CFS)/MgAl2O4 (MAO)/Pt multilayer structure. CFS has about 100% (theoretically) spin polarization and high Curie temperature, and the spinel MAO lattice matches the CFS lattice parameters. It has been demonstrated that perpendicular magnetic anisotropy (PMA) could be controlled by systematically altering the thickness of CFS, MAO, and Ta layers, as well as annealing temperatures. A strong PMA is seen at CFS thickness of 4 nm (Keff=4.7×105 erg/cm3). The MAO interface follows a thickness-temperature co optimization: the optimal annealing temperature increases with MAO thickness, and moderate thickening effectively suppresses PMA degradation induced by high temperature annealing. A 4 nm Ta buffer significantly enhances PMA, producing an effective anisotropy constant Keff up to 6.42×105 erg/cm3. Compared to a Pt buffer, Ta buffer further strengthens PMA, broadens the processing window, and reduces materials cost. These results establish an experimentally grounded pathway for materials selection and interface engineering toward high performance, cost effective spintronic devices.
Key words:  perpendicular magnetic anisotropy    Co2FeSi    MgAl2O4    remanence ratio
出版日期:  2026-04-25      发布日期:  2026-05-06
ZTFLH:  TB34  
基金资助: 国家自然科学基金(51961004)
通讯作者:  * 王可,东华理工大学电子与电气工程学院教授、博士研究生导师,德国“洪堡”学者,从事磁、光、电信息存储技术与薄膜器件芯片新制备方法的研究等。wang@ecut.edu.cn   
作者简介:  王尚前,东华理工大学电子与电气工程学院硕士研究生,在王可教授的指导下研究磁性存储薄膜材料。
引用本文:    
王尚前, 章超凡, 韩忠豪, 刘剑, 王可. Ta/Co2FeSi/MgAl2O4/Pt多层膜系垂直磁各向异性研究[J]. 材料导报, 2026, 40(8): 25080120-5.
WANG Shangqian, ZHANG Chaofan, HAN Zhonghao, LIU Jian, WANG Ke. Study on Perpendicular Magnetic Anisotropy of Ta/Co2FeSi/MgAl2O4/Pt Multilayer Films. Materials Reports, 2026, 40(8): 25080120-5.
链接本文:  
https://www.mater-rep.com/CN/10.11896/cldb.25080120  或          https://www.mater-rep.com/CN/Y2026/V40/I8/25080120
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