First-principles Study of H2O Adsorption by vG and Cu/vG Systems
LI Men1, LI Tianpeng1, GUO Aiqiang1, LIU Jianguo2, GAO Xinbao1,*
1 National Demonstration Center of Experimental Teaching for Ammunition Support and Safety Evaluation Education, Army Engineering University of PLA, Shijiazhuang 050000, China 2 63870 Troops of PLA, Huayin 714200, Shaanxi, China
Abstract: Regarding the adsorption of H2O by vacancy defect graphene (vG) and Cu doped vacancy defect graphene (Cu/vG), a first principles calculation method based on density functional theory was used to analyze the electrostatic potential (ESP) of vG and Cu/vG systems. The results showed that vG tends to adsorb the H atom side of H2O, while Cu/vG adsorbs H2O in two configurations. We conducted density of states analysis on vG and Cu/vG systems, and the results showed that the chemical activity of vG was higher than that of Cu/vG, mainly due to the significant contribution of the 2px and 2py orbitals of the C atom with hollow vacancies in vG to the orbitals near the Fermi level. The calculation shows that the adsorption energy of vG for H2O is between the two configurations of Cu/vG for H2O adsorption. The analysis of orbital density of states for the adsorption of H2O by vG and Cu/vG systems shows that for Cu/vG adsorption configurations with higher adsorption energy, the overlap of Cu 3d and O 2p orbitals is the reason for the stronger adsorption of the system.
李门, 李天鹏, 郭爱强, 刘建国, 高欣宝. vG和Cu/vG体系对H2O吸附的第一性原理研究[J]. 材料导报, 2025, 39(6): 23120052-5.
LI Men, LI Tianpeng, GUO Aiqiang, LIU Jianguo, GAO Xinbao. First-principles Study of H2O Adsorption by vG and Cu/vG Systems. Materials Reports, 2025, 39(6): 23120052-5.
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