Abstract: Silicon carbide(SiC) material has excellent physical, chemical and electrical properties, which can meet the application under extreme conditions such as high temperature and high corrosion. SiC is also the main candidate material for MEMS under extreme working conditions, and has become a hot research topic in the field of new materials, microelectronics and optoelectronics in the world. At the same time, silicon carbide has homogeneous isomers that belong to the same cubic crystal system as silicon, and can be combined with silicon technology to produce silicon based devices that meet the needs of large-scale integrated circuits. Therefore, the work of preparing silicon carbide films using silicon wafers as substrates has received special attention from researchers. This paper summarizes the research status of Si-based SiC films at home and abroad in recent years, and systematically introduces their preparation methods, mainly including various chemical vapor deposition(CVD) methods and physical vapor deposition(PVD) methods, and summarizes the properties of Si-based SiC films, including Young’s modulus, hardness, film reflectivity, film transmittance, luminescence performance, resistance, piezoresistance, resistivity and conductivity, as well as their applications in fields such as MEMS sensors, biosensors and solar cells. Finally, looking forward to the future development of Si-based SiC films.
杨晨光, 王秀峰. 硅基SiC薄膜制备与应用研究进展[J]. 材料导报, 2024, 38(7): 23010118-14.
YANG Chenguang, WANG Xiufeng. Research Progress in Preparation and Application of Si-based Silicon Carbide Films. Materials Reports, 2024, 38(7): 23010118-14.
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