Preparation of ZnO∶Ga Films by Thermal Oxidation of ZnS∶Ga and Their Photoluminescent Properties
ZHANG Xiaohong1, YANG Qing1,2, ZHANG Xuchen1, MA Yan1, YI Xiaoyin1
1 Faculty of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048; 2 Shaanxi Province Key Laboratory for Electrical Materials and Infiltration, Xi’an 710048
Abstract: Ga-doped ZnS (ZnS∶Ga) films with different Ga content were prepared by chemical bath deposition, and then the thermal oxidation in the air was subsequently performed for the growth of Ga-doped ZnO (ZnO∶Ga) films. The microstructures, surface compositions, and photoluminescent properties of the ZnO∶Ga films were investigated. The results showed that the microstructure, stoichiometric ratio, and the relative content of oxygen vacancy of ZnO films were altered due to Ga doping, which then affected the photoluminescent properties of ZnO films. The increase of Ga content led to improved compactness and refined particle size of the product, resulted in a more near-stoichiometric composition of ZnO, lowered the relative content of oxygen vacancy, also enhanced the IUV/IVis ratio.
张小红, 杨卿, 张旭晨, 马研, 易筱银. 热氧化ZnS∶Ga制备ZnO∶Ga薄膜及其光致发光性能*[J]. 《材料导报》期刊社, 2017, 31(18): 11-15.
ZHANG Xiaohong, YANG Qing, ZHANG Xuchen, MA Yan, YI Xiaoyin. Preparation of ZnO∶Ga Films by Thermal Oxidation of ZnS∶Ga and Their Photoluminescent Properties. Materials Reports, 2017, 31(18): 11-15.
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2017, Vol. 31 
