AlGaN/GaN高电子迁移率晶体管传感器的栅极功能化处理方法综述

doi:10.11896/cldb.24050011

材料导报

2025, Vol. 39

Issue (13): 24050011-10 https://doi.org/10.11896/cldb.24050011

无机非金属及其复合材料

AlGaN/GaN高电子迁移率晶体管传感器的栅极功能化处理方法综述

王浩宇, 郭焱, 周玉刚^*, 陈敦军, 张荣, 郑有炓

南京大学电子科学与工程学院江苏省光电信息功能材料重点实验室,南京 210023

A Technological Review on Gate Functionalization for AlGaN/GaN High Electron Mobility Transistor Sensors

WANG Haoyu, GUO Yan, ZHOU Yugang^*, CHEN Dunjun, ZHANG Rong, ZHENG Youdou

Jiangsu Key Laboratory of Optoelectronic Information Functional Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China

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摘要半导体场效应晶体管(FET)在传感器中的应用是当前传感领域的热门研究方向之一。以AlGaN/GaN高电子迁移率晶体管(HEMT)等为代表,FET传感器在检测限、灵敏度、特异性和操作便捷性等方面均优势明显,且易于集成化。器件传感表面的功能化处理是器件制造的核心工艺之一,是场效应晶体管传感器后续发展的重要方向。本文综述了国内外基于AlGaN/GaN HEMT的传感器栅极功能化处理方法的研究进展,分别对气体、溶液离子和生物物质检测等常用的处理方法进行了介绍,并指出了一些现有处理手段中存在的局限性,展望了未来相关研究的部分发展方向。

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关键词: 高电子迁移率晶体管栅极功能化处理气体探测离子敏传感器生物传感

Abstract: The application of semiconductor field effect transistors (FETs) in sensors is one of the hottest research topics in the field of sensing. As represented by AlGaN/GaN high electron mobility transistors (HEMTs), FET sensors have obvious advantages in terms of detection limit, sensitivity, specificity, and ease of operation and integration. As the core technique in the device fabrication, the functionalization of the devices plays an important role in realizing the above functions and advantages, which also has great potential for the subsequent development of devices. This review summarizes the domestic and foreign research progress of the gate functionalization methods of AlGaN/GaN HEMT-based sensors for detecting gas, solution ions, and biological substances separately. Finally, we point out the limitations and shortcomings of some existing treatment methods, and look forward to some aspects of future research.

Key words: high electron mobility transistor gate functionalization processing gas detection ion-sensitive field-effect transistor biosensing

出版日期: 2025-07-10 发布日期: 2025-07-21

ZTFLH:

TN386

基金资助: 江苏省重点研发计划产业前瞻与关键核心技术项目(BE2022070-4)

通讯作者: *周玉刚,博士,南京大学电子科学与工程学院教授、博士研究生导师。目前主要从事GaN基半导体材料与器件、深紫外LED与Micro-LED,以及光电器件异质集成等方面的研究工作。ygzhou@nju.edu.cn

作者简介: 王浩宇,南京大学电子科学与工程学院硕士研究生,在周玉刚教授的指导下进行研究。目前主要研究领域为基于AlGaN/GaN HEMT结构的传感器。

引用本文:

王浩宇, 郭焱, 周玉刚, 陈敦军, 张荣, 郑有炓. AlGaN/GaN高电子迁移率晶体管传感器的栅极功能化处理方法综述[J]. 材料导报, 2025, 39(13): 24050011-10.
WANG Haoyu, GUO Yan, ZHOU Yugang, CHEN Dunjun, ZHANG Rong, ZHENG Youdou. A Technological Review on Gate Functionalization for AlGaN/GaN High Electron Mobility Transistor Sensors. Materials Reports, 2025, 39(13): 24050011-10.

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https://www.mater-rep.com/CN/10.11896/cldb.24050011 或 https://www.mater-rep.com/CN/Y2025/V39/I13/24050011

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