一种低温退火处理提高锡基钙钛矿太阳能电池效率的方法

doi:10.11896/cldb.23020020

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Abstract Iin-based perovskite has been considered as a candidate material to replace lead based perovskite because of its ideal band gap and high carrier efficiency. However, the rapid crystallization rate has been one of the obstacles limiting the photoelectric conversion of tin-based perovskite solar cells. A simple and low-cost method is used here. After spinning perovskite film is annealed at low temperature, and then annealed at 90 ℃. The objective is to slow down the growth of perovskite crystals in the process of crystallization without changing the type of perovskite crystals and introducing new components. By this method, the light absorption efficiency of perovskite thin films is improved, the surface hole defects are reduced, and the carrier recombination in the device is reduced. Equipment filling coefficient increased by 29.84%, efficiency increased from 3.645% to 5.38%.

Key words： tin-based perovskite solar cells crystallization controlled low temperature annealing defect passivation

Published: 10 December 2023 Online: 2023-12-08

CLC number:

O782

Fund:National Natural Science Foundation of China (51602031) and Science and Technology Support Project of Changzhou (CE20215025).

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	Articles by authors
	YU Haiyan
	XU Fangxian
	ZHANG Shuai
	YUAN Ningyi
	DING Jianning

Cite this article:

YU Haiyan,XU Fangxian,ZHANG Shuai, et al. A Method for Improving the Efficiency of Tin-based Perovskite Solar Cells by Low Temperature Annealing Treatment[J]. Materials Reports, 2023, 37(23): 23020020-5.

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http://www.mater-rep.com/EN/10.11896/cldb.23020020 OR http://www.mater-rep.com/EN/Y2023/V37/I23/23020020

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