适用声波谐振器的磁控溅射制备AlN薄膜优化技术

doi:10.11896/cldb.21080275

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Abstract Aluminum nitride (AlN) is one of the most attractive piezoelectric materials due to its excellent physiochemical properties and great compatibility with standard CMOS crystalline silicon technology. Therefore, AlN is advantageous as compared to other alternatives such as ZnO or lead zirconate titanate (PZT), where AlN thin films have great potential to become a key component in acoustic resonators in the 5G age. AlN thin films exhibit an excellent electromechanical coupling coefficient, high acoustic velocity, large elastic modulus, andhigh thermal conductivity. With the recent developments of thin film technology, good control of the film microstructure can be achieved, where the thin film quality directly determines the overall properties of the device, including the operating frequency, Q value and the overall reliability. In recent years, important progress has been made concerning the preparation technology of AlN thin films by reactive magnetron sputtering, leading to good control of the microstructure of well-formed films, using a high deposition rate, low price. Adjusting the many factors that influence the thin film quality may be rather challenging though to meet the requirements of the main physical parameters. Previous studies suggest that the directional growth of AlN thin films is affected by several factors such as the sputtering power, base pressure and N₂/Ar flow ratio. Furthermore, it was reported that the thin film stress was extremely sensitive to changes in the Ar gas flow, whereas the surface roughness and film thickness were mainly affected by the sputtering power and base pressure. In addition to the basic parameters of reactive magnetron sputtering, it is generally found that the orientation of substrate during growth, the substrate material, the substrate cleanliness, the annealing temperature and atmosphere have significant effects on the crystallization and preferred orientation of thin films. Here in this work, we focus on several physical parameters of AlN thin films such as the preferential orientation of the crystal planes, film stress, surface roughness, and deposition rate, and their variations with sputtering power, gas partial pressure, and substrate temperature. Furthermore, we discuss several problems of AlN thin film work that remain to be solved in future and the possible directions that future research in this exciting field may proceed to.

Key words： AlN thin film piezoelectric material acoustic resonator magnetron sputtering preferential orientation

Published: 10 June 2023 Online: 2023-06-19

CLC number:	O484.1
	TN65

Fund:National Natural Science Foundation of China (51472081), the Science Foundation of State Key Laboratory of Structural Chemistry (20210028) and the Outstanding Talent Foundation for Green Industry Leading Plan of HBUT (JCRC2021003).

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	Articles by authors
	MA Xinguo
	CHENG Zhengwang
	WANG Mei
	HE Jing
	ZOU Wei
	DENG Shuiquan

Cite this article:

MA Xinguo,CHENG Zhengwang,WANG Mei, et al. Optimizing Technology of the Preparation of AlN Thin Film by Magnetron Sputtering for Acoustic Resonators[J]. Materials Reports, 2023, 37(11): 21080275-7.

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http://www.mater-rep.com/EN/10.11896/cldb.21080275 OR http://www.mater-rep.com/EN/Y2023/V37/I11/21080275

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