| INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
|
|
|
|
|
| Research Progress of Memristor Based on Heterostructure |
| CHEN Xiaoping1, LOU Yumin2,3, ZHAO Ningning2,3, HUANG Yijun2,3, HU Hailong1, YUE Jianling1,*
|
1 School of Aeronautics and Astronautics, Central South University, Changsha 410083, China
2 Zhejiang Energy Group R ＆ D Institute Co., Ltd., Hangzhou 310003, China
3 Zhejiang Key Laboratory of Research on High Efficiency Energy Saving and Pollutant Control Technology of Thermal Power Generation, Hangzhou 311121, China |
|
|
|
Abstract Memristor is one of the most promising next-generation non-volatile memories, showing great application potential in new non-volatile storage, logic operation and brain nerve function simulation. At present, due to the dispersion of memristor resistance changing parameters as well as poor device repeatability, further development has been seriously hindered.
The selected materials in constituent are becoming more abundant and diverse owing to the varied heterogeneous structural design methods. The structure and relative composition of heterostructure can be tuned with great flexibility through changing the thickness of the inserted layer. On the other hand, the interface barriers and charge trapping effects induced by the artificially constructed interface heterojunction inside the material have been placing additional adjustments to the improved performance of the memristor, which is believed to be a very effective method for regulating the performance of memristors and revealing the mechanism of memristor resistance changes. By studying heterostructure memristors, it is acknowledged that the power consumption of a single device, the stability of a device, and the durability of a device have a pronounced improvement compared to that of single-layer oxide devices. The heterostructural memristor has unique advantages in simulating artificial synapse and neuromorphic circuit applications.
This work summarizes the latest research progress of heterostructural memristors, including the selection and suitability of material system, device structural design, property, mechanism and its potential application, and the limitations of current study are pointed out. This review aims to offer a certain basis for the structural design, preparation and application of heterostructure memristors.
|
|
Published:
Online: 2022-05-24
|
|
|
| Fund:National Natural Science Foundation of China(51775560), Research Project of Anti-oxidation Coating on Superalloy Bolt Surface (JSYJY-JS-2019-059). |
|
|
1 Chua L. IEEE Transactions on Circuit Theory,1971, 18(5),507.
2 Strukov D B,Snider G S,Stewart D R, et al. Nature,2008, 453(7191),80.
3 Jo S H,Kim K H,Lu W. Nano Letters,2009, 9(1),496.
4 Pershin Y V,La F S,Di V M. Physical Review E,2009, 80(2), 219261.
5 Li Q J, Liu H J, Xu H, et al. National Defense Science & Technology, 2016, 37(6), 9 (in Chinese).
李清江,刘海军,徐晖. 国防科技,2016, 37(6),9.
6 Jo S H,Chang T,Ebong I, et al. Nano Letters,2010, 10(4),1297.
7 Jo S H,Kim K H,Lu W. Nano Letters,2009, 9(2),870.
8 Linn E,Rosezin R,Kuegeler C, et al. Nature Materials,2010, 9(5),403.
9 Pershin Y V,Di V M. IEEE Transactions on Circuits and Systems I-Regular Papers,2010, 57(8),1857.
10 Xia Q,Robinett W, Cumbie M W, et al. Nano Letters,2009, 9(10),3640.
11 Yang Y C,Pan F,Liu Q, et al. Nano Letters,2009, 9(4),1636.
12 Borghetti J, Snider G S, Kuekes P J, et al. Nature,2010, 464(7290),873.
13 Snider G S. In:2008 IEEE International Symposium on Nanoscale Architectures. Anaheim, 2008, pp. 85.
14 Yang J J,Strukov D B, Stewart D R. Nature Nanotechnology,2013, 8(1),13.
15 Kao M C, Chen H Z, Young S L, et al. Materials (Basel, Switzerland),2017, 10(11), 1327.
16 Wang J, Liang D, Li X, et al. Materials Research Express,2018, 5(12), 125007.
17 Wang L G, Cao Z Y, Qian X, et al. ACS Applied Materials & Interfaces,2017, 9(7),6634.
18 Xie J, Cheng B,Liu L, et al. Materials Research Express,2019, 6(9), 96428.
19 Khan A H, Atiq S, Anwar M S, et al. Journal of Materials Science-Materials in Electronics,2018, 29(14),11812.
20 Lee T H, Elliott S R. Physica Status Solidi B-Basic Solid State Physics,2012, 249(10),1886.
21 Liu Q,Guan W,Long S, et al. Applied Physics Letters,2008, 92(1), 12117.
22 Maas K, Villepreux E, Cooper D, et al. Advanced Functional Materials,2020, 30(17), 1909942.
23 Matveyev Y A, Markeev A M, Lebedinskii Y Y, et al. Thin Solid Films,2014, 563, 20.
24 Guo X, Schindler C. Applied Physics Letters,2007, 91(13), 133513.
25 Kozicki M N,Gopalan C, Balakrishnan M, et al. IEEE Transactions on Nanotechnology,2006, 5(5),535.
26 Li Y, Long S, Lv H, et al. IEEE Electron Device Letters,2011, 32(3),363.
27 Li Y, Long S, Zhang M, et al. IEEE Electron Device Letters,2010, 31(2),117.
28 Kumar S,Rath C. Physica Status Solidi A-Applications and Materials Science,2020, 217(1), 1900756.
29 Roy S,Niu G,Wang Q, et al. ACS Applied Materials & Interfaces,2020, 12(9),10648.
30 Wang Y,Niu G,Wang Q, et al. Nanotechnology,2020, 31(20),205203.
31 Zhao L,Clima S,Magyari K B, et al. Applied Physics Letters,2015, 107(1), 13504.
32 Cantley K D,Subramaniam A,Stiegler H J, et al. IEEE Transactions on Nanotechnology,2011, 10(5),1066.
33 Chang Y F,Tsai Y T,Syu Y E, et al. ECS Journal of Solid State Science and Technology,2012, 1(3),Q57.
34 Kim S,Abbas Y,Jeon Y R, et al. Nanotechnology,2018, 29(41), 415204.
35 Liu S,Sun Y,Song B, et al. Physics Letters A,2019, 383(30), 125877.
36 Srivastava S,Thomas J P,Leung K T. Nanoscale,2019, 11(39),18159.
37 Lee J, Bourim E M, Lee W, et al. Applied Physics Letters,2010, 97(17), 172105.
38 Sun X W. Study on preparation and performance of SrTiO3-based resis-tance change memory. Master's Thesis, Henan University, China, 2012.(in Chinese).
孙献文. SrTiO3基阻变存储器的制备和性能研究. 硕士学位论文, 河南大学, 2012.
39 Smirnov V A,Tominov R V,Avilov V I, et al. Semiconductors,2019, 53(1),72.
40 Gul F. Applied Nanoscience,2019, 10(2),611.
41 Wang Q,Niu G,Roy S, et al. Journal of Materials Chemistry C,2019, 7(40),12682.
42 Kim C H, Ahn Y, Son J Y. Journal of the American Ceramic Society,2016, 99(1),9.
43 Siddiqui G U, Rehman M M, Choi K H. Polymer,2016, 100,102.
44 Wu Y, Wei Y, Huang Y, et al. Nano Research,2017, 10(5),1584.
45 Chang T Y, Cheng Y W, Lee P T. Applied Physics Letters,2010, 96(4), 43309.
46 Ma L P, Liu J, Yang Y. Applied Physics Letters,2002, 80(16),2997
47 Nagashima K, Koga H, Celano U, et al. Scientific Reports,2014, 4, 5532.
48 Son D I, Kim T W,Shim J H, et al. Nano Letters,2010, 10(7),2441.
49 Verbakel F, Meskers S C J, Janssen R A J. Chemistry of Materials,2006, 18(11),2707.
50 Li H, Ye L, Xu J, et al. In:2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO). Sendai, 2016, pp. 861.
51 Wang M, Cai S, Pan C, et al. Nature Electronics,2018, 1(2),130.
52 Terai M, Sakotsubo Y, Kotsuji S, et al. IEEE Electron Device Letters,2010, 31(3),204.
53 Prakash A, Maikap S, Lai C S, et al. Japanese Journal of Applied Phy-sics,2012, 51(4), 40006.
54 Choi J H, Das S N, Myoung J M. Applied Physics Letters,2009, 95(6), 62105.
55 Yoon J, Choi H, Lee D, et al. IEEE Electron Device Letters,2009, 30(5),457.
56 Liu X, Sadaf S M, Son M, et al. Nanotechnology,2011, 22(47), 475702.
57 Cui H P,Li J C,Yuan H L. RSC Advances,2018, 8(35),19861.
58 Song Y L, Yang L M, Wang Y L, et al. Japanese Journal of Applied Physics,2014, 53(5), 51101.
59 Cheng C H, Chin A,Yeh F S. IEEE Electron Device Letters,2010, 31(9),1020.
60 Zahari F, Hansen M, Mussenbrock T, et al. Aims Materials Science,2015, 2(3),203.
61 Zhang B, Gao Q, Wang B, et al. Materials Research Express,2019, 6(8), 86306.
62 Banerjee W, Lu N, Yang Y, et al. IEEE Transactions on Electron Devices,2018, 65(3),957.
20070058-963 Huang X,Chang K C,Chang T C, et al. IEEE Electron Device Letters,2014, 35(12),1227.
64 Zhang R, Huang H, Xia Q, et al. Advanced Electronic Materials,2019, 5(5), 1800833.
65 Li K, Wen Z, Wu D, et al. Journal of Physics D-Applied Physics,2013, 46(3), 35308.
66 Spassov D, Paskaleva A, Krajewski T A, et al. Nanotechnology,2018, 29(50), 505206.
67 Zhang Y, Deng N, Wu H, et al. Applied Physics Letters,2014, 105(6), 63508.
68 Jiang L, Lv F C, Yang R, et al. Journal of Materiomics,2019, 5(2),296.
69 Dirkmann S, Hansen M, Ziegler M, et al. Scientific Reports,2016, 6,647.
70 Huh W,Jang S,Lee J Y, et al. Advanced Materials,2018, 30(35),1801447.
71 Bessonov A A, Kirikova M N, Petukhov D I, et al. Nature Materials,2015, 14(2),199.
72 Ilyas N, Li D, Li C, et al. Nanoscale Research Letters,2020,15(1),30.
73 Yu S, Wu Y, Jeyasingh R, et al. IEEE Transactions on Electron Devices,2011,58(8), 2729.
74 Sun Y, Zhao X, Song C, et al. Advanced Functional Materials,2019, 29(13), 1808376.
75 Xu D P, Cheng P H, Chen L, et al. Journal of Infrared and Millimeter Waves,2018, 37(6),693.
76 Lee W, Park J, Kim S, et al. ACS Nano,2012, 6(9),8166.
77 Zhang W,Kong J Z,Cao Z Y, et al. Nanoscale Research Letters,2017, 12,393.
78 Wang B, Luo H, Wang X, et al. ACS Nano,2020, 14(1),175.
79 Wang Y, Lv Z, Chen J, et al. Advanced Materials,2018, 30(38), 1802883.
80 Wu Z, Chen X, Zhang Y, et al. Advanced Materials Interfaces,2018, 5(4), 1701210.
81 Zhu S, Zhang X, Sun B, et al. Vacuum,2018, 151, 261.
82 Sun S, Hu Y, Xu Y, et al. Journal of Electronic Materials,2020, 49(2),980.
83 Gonzalez-Flores K E, Holley P, Cabanas S A, et al. Superlattices and Microstructures,2020, 137,980.
84 Zou H, Zhu X, Hu Y, et al. Journal of Materials Science-Materials in Electronics,2017, 28(4),3806.
85 Hu Y, You H,Zhu X, et al. Journal of Non-Crystalline Solids,2017, 457,141.
86 Zheng L, Song W, Song Z, et al. ACS Applied Materials & Interfaces,2019, 11(49),45885.
87 Zhao Z, Hue S, Wu W, et al. Semiconductor Science and Technology,2019, 34(10), 105022.
88 Zhang J, Hu Y, Zhang R, et al. ECS Journal of Solid State Science and Technology,2019, 8(10),P563.
89 Li F, Yang B, Zhang J, et al. Physical Chemistry Chemical Physics,2020, 22(2),716.
90 Zhou L, Yang Z, Wang X, et al. Advanced Electronic Materials,2020, 6(1), 1900781.
91 Guo X, Hu Y, Chou Q, et al. Journal of Materials Science-Materials in Electronics,2019, 30(21),19302.
92 Chen Q, Lin M, Wang Z, et al. Advanced Electronic Materials,2019, 5(9),1800852.
93 Wang Y, Lv Z, Liao Q, et al. Advanced Materials,2018, 30(28), 1800327.
94 Wang G L. Atomic layer deposition of several nano-composite oxide resistive devices and their storage characteristics and memristive function. Ph.D. Thesis, Nanjing University, China, 2017 (in Chinese).
王来国. 几种纳米复合氧化物阻变器件的原子层沉积制备及其存储特性和忆阻功能的研究. 博士学位论文, 南京大学, 2017.
95 Jiang H, Li C, Lin P, et al. Advanced Electronic Materials,2019, 5(9), 1800958.
96 Lai Y F,Chen F,Zeng Z C, et al. Chinese Physics B,2017, 26(8), 87305.
97 You H, Hu Y, Zhu X, et al. Applied Physics A-Materials Science & Processing,2018, 124(2),168.
98 Jiang H, Han L, Lin P, et al. Scientific Reports,2016, 6,28525.
99 Nili H, Walia S, Balendhran S, et al. Advanced Functional Materials,2014, 24(43),6741.
100 Kim K M, Song S J, Kim G H, et al. Advanced Functional Materials,2011, 21(9),1587.
101 Govoreanu B, Redolfi A, Zhang L, et al. In:2013 IEEE International Electron Devices Meeting. Washington, 2013, pp. 10.2.1.
102 Yan X, Qin C, Lu C, et al. ACS Applied Materials & Interfaces,2019, 11(51),48029.
103 Liu S, Lu N, Zhao X, et al. Advanced Materials,2016, 28(48),10623.
104 Baek K,Park S,Park J, et al. Nanoscale,2017, 9(2),582.
105 Zhou W. Transition metal oxide selector and memristor performance control. Master's Thesis, Huazhong University of Science and Technology, China, 2019 (in Chinese).
周稳. 过渡金属氧化物选择器与忆阻器性能调控.硕士学位论文,华中科技大学, 2019.
106 Lyu F C. Research on double-layer transition metal oxide heterojunction memristor and its resistance change mechanism. Master's Thesis, Huazhong University of Science and Technology, China, 2017 (in Chinese).
吕福成. 双层过渡金属氧化物异质结忆阻器及其阻变机理研究.硕士学位论文,华中科技大学, 2017.
107 Lin Y D, Chen P S, Lee H Y, et al. Nanoscale Research Letters,2017, 12,407.
108 Bessonov A A, Kirikova M N, Petukhov D I, et al. Nature Materials,2015, 14(2),199.
109 Zhu K, Liang X, Yuan B, et al. In: 2019 IEEE International Reliability Physics Symposium (IRPS). Monterey, 2019, pp. 1.
110 Prakash A,Park J,Song J, et al. IEEE Electron Device Letters,2014, 36(1),32.
111 Park S,Sheri A,Kim J, et al. In: 2013 IEEE International Electron Devices Meeting. Washington, 2013, pp. 2561.
112 Wu W,Wu H,Gao B, et al. IEEE Electron Device Letters,2017, 38(8),1019.
113 Kim S,Choi S,Lu W. ACS Nano,2014, 8(3),2369.
114 Woo J, Moon K, Song J, et al. IEEE Electron Device Letters,2016, 37(8),994.
115 Miao F, Strachan J P, Yang J J, et al. Advanced Materials,2011, 23(47),5633.
116 Miao F, Yi W, Goldfarb I, et al. ACS Nano,2012, 6(3),2312.
117 Tian H, Guo Q, Xie Y, et al. Advanced Materials,2016, 28(25),4991.
118 Yao P, Wu H, Gao B, et al. Nature,2020, 577(7792),641.
119 Mennel L, Symonowicz J, Wachter S, et al. Nature,2020, 579(7797),62.
120 Wang C Y,Liang S J,Wang S, et al. Science Advances,2020, 6(26),eaba6173. |
|
|
|
渝公网安备50019002502923号 © Editorial Office of Materials Reports.
2022, Vol. 36 
