Materials Reports  2020, Vol. 34 Issue (Z1): 86-89 |
| INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
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| Influence of Sb-soak Interface on the Crystallization and the Detector Performance of InAs/InAsSb Superlattices |
| QI Tongtong1, GUO Jie1, WANG Guowei2, HAO Ruiting1, XU Yingqiang2, CHANG Faran1
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1 Yunnan Key Laboratory for Opti-electronic Information Technology,Yunnan Normal University, Kunming 650092, China;
2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, CAS, Beijing 100083, China |
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Abstract PIN-type long-wave infrared (LWIR) 28 ML InAs/7 ML InAs0.48Sb0.52 superlattice detector materials were grown on GaSb substrates by mole-cular beam epitaxy (MBE). The influence Sb-soaked interface on the surface morphology, microstructure and photoelectric properties were studied. The results showed that, compared with superlattices without interface control, the surface of superlattices with Sb-soaked interface was smoother with the roughness 1.28 . The crystal structure was more complete with the FWHM and interface fluctuations reducing significantly. The mismatch between superlattices and substrates was reduced from 3.26% to 2.97%. The 50% cut-off wavelength of InAs/InAsSb superlattice detector was 10 μm with the quantum efficiency 3.1%. The superlattice with Sb-soaked interface had lower dark current and higher differential impedance. The dark current density was 0.12 A/cm2 and R0A was 0.44 Ω·cm2 at -50 mV bias. The detectivity was calculated to 5.06×107 cm·Hz1/2/W. This indicated that Sb-soaked interface effectively inhibited the diffusion of Sb and improved the crystal quality and detection perfor-mance. But the mismatch stress caused by the interface was still very large. These results provided a basis for the interface growth of high-quality LWIR InAs/InAsSb superlattice detector.
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Published: 01 July 2020
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| Fund:This work was financially supported by the National Natural Science Foundation of China (61274137) |
| About author:: Tongtong Qi received his M. D. in condensed matter physics from Yunnan Normal University in 2019. His research interests focus on the infrared detectors and lasers materials grown by MBE and MOCVD. ; Jie Guo obtained his Ph. D. degree in materials science from Northwest Polytechnical University in 2009. He is currently an associate professor and master supervisor. He has published more than 50 journal papers. 5 natio-nal invention patents were authorized. His team's research interests are antimonides-based infrared materials and detectors, Cu-based thin films solar cells and GaAs-based high efficiency solar cells. He has trained more than ten graduate students. |
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1 Sai-Halasz, Tsu R, Esaki L. Applied Physics Letters,1977,30,651.
2 Smith D L, Mailhiot C. Journal of Applied Physics,1987,62,2545.
3 Edwall D, DeWames R E,Mclevige M V. et al. Journal of Electronic Materials,1998,27,698.
4 Pines M Y, Stafsudd O M. Infrared Physics & Technology,1979,19,563.
5 Connelly B C, Metcalfe G D, Shen H, et al. Applied Physics Letters,2010,97,251117.
6 Donetsky D, Belenky G, Svensson S, et al. Applied Physics Letters,2010,97,0521.
7 Steenbergen E H, Munna K, Ouyang L, et al. Journal of Vacuum Science & Technology B,2010,30,02B107.
8 Dreyer C, Alkauskas A, Lyons J, et al. Applied Physics Letters,2016,108,141101.
9 Olson B V, Shaner E A, Kim K, et al. Applied Physics Letters,2012,101,092109.
10 Hoglund L, Ting D Z, Khoshakhlagh A, et al. Applied Physics Letters,2013,103,221908.
11 Olson B V, Grein C H, Kim J K, et al. Applied Physics Letters,2015,107,261104.
12 Webster P T, Zhang Y H, Kim J K, et al. Applied Physics Letters,2015,106,061907.
13 Haddali A, Brown G J, Razeghi M, et al. Applied Physics Letters,2014,105,121104.
14 Haddali A, Brown G J, Razeghi M, et al. Applied Physics Letters,2015,106,011104.
15 Danial Z, Liu R, Kim J K, et al. Applied Physics Letters,2015,106,071107.
16 Steenbergen E H, Brown G J, Razeghi M, et al. Applied Physics Letters,2014,104,092109.
17 Aytac Y, Olson B V, Kim J K, et al. Journal of Applied Physics,2015,118,125701.
18 Aytac Y, Olson B V, Kim J K, et al. Journal of Applied Physics,2016,119,215705.
19 Höglund L, Ting D Z, et al. Applied Physics Letters,2016,108,671.
20 David Z, Alexander Soibel, Arezou Khoshakhlagh, et al. Applied Physics Letters,2018,113,021101.
21 Michalczewski K, Kubiszyn L, Rogalski A, et al. Infrared Physics & Technology,2018,95,222.
22 Ruiting Hao, Yang Ren, Sijia Liu, et al. Journal of Crystal Growth,2017,470,33.
23 Rodriguez J B, Christol P, Cerutti L, et al. Journal of Crystal Growth,2005,274(1),6.
24 Waterman J R, Shanabrook B V, Wagner R J, et al. Semiconductor Science and Technology,1993,8(1S),S106.
25 Khoshakhlagh A, Plis E, Myers S, et al. Journal of Crystal Growth,2009,311,1901. |
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