Mg<sub>2</sub>(Si,Sn)基热电材料研究进展

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Abstract Thermoelectric functional material can realize the conversion between thermal and electric energy by the carrier and phonon transport and interaction. Solar radiation, industrial and automobile waste heat can be converted to electric energy by thermoelectric materials. It has great significance to alleviate the pressure of environmental pollution and energy. In addition, because of the advantages of low noise, non-pollution, small size and sensitive response, thermoelectric device has received extensive attention from researchers in recent years. The performance of thermoelectric material is characterized by the figure of merit ZT. How to improve the conversion efficiency of thermoelectric materials, i.e. improve the ZT value, becomes the research hotspot.
As one of the most potential medium temperature thermoelectric materials, Mg₂(Si,Sn) alloy has been widely researched due to the advantage of low cost and non-toxic. Researchers have tried some synthetic methods to obtain high quality Mg₂(Si,Sn) bulk, such as high frequency induction melting, solid reaction and hot press sintering, two step solid reaction and spark plasma sintering, rapid solidification and plasma activated sintering. In addition, band engineering, single and double elements doping are also used to further optimize the performance, and the ZT values are improved from 0.5 to 1.55. However, this kind of bulk materials with nano-sized grains exists the problem of incomplete reaction and grain growth during service. Furthermore, the chemical activity and volatility of Mg and large melting point difference between elements bring great difficulties to the synthesis of Mg₂(Si,Sn) by melting methods, and extremely limited the optimization of thermoelectric performance. Therefore, preparation of high quality Mg₂(Si,Sn) bulk remains an urgent issue.
In this paper, the latest research progress of preparation processes, band engineering application, and the choice of doping elements for Mg₂(Si,Sn) based thermoelectric materials are summarized. The existing problems and development direction in the future are presented. We also put forward the method of Mg₂(Si,Sn) single crystal growth by directional solidification. And the thermoelectric performance can be optimized by the anisotropy of single crystal. This method is expected to solve the problem of performance deterioration caused by nano-sized grain growth during service. At the same time, a different path of thermoelectric performance optimization is put forward for this kind of alloys.

Key words： directional solidification thermoelectric materials Mg₂(Si,Sn) band engineering

Published: 01 July 2020

CLC number:

TG146.2+2

Fund:This work was financially supported by the National Natural Science Foundation of China (51904219), Natural Science Foundation of Xi'an Aeronautical University (2019KY0203).

About author:: Xin Li received his D. E. degree in materials science from Northwestern Polytechnical University in 2018. He is currently a lecture at the School of Material Science and Engineering, Xi'an Aeronautical University. His research has focused on directional solidification, thermoelectric materials and first-principle calculation.

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	LI Xin
	XIE Hui
	YANG Bin
	LI Shuangming

Cite this article:

LI Xin,XIE Hui,YANG Bin, et al. Research Progress on the Mg₂(Si,Sn) Based Thermoelectric Materials[J]. Materials Reports, 2020, 34(Z1): 43-47.

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http://www.mater-rep.com/EN/ OR http://www.mater-rep.com/EN/Y2020/V34/IZ1/43

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