Yb掺杂Ⅷ型YbxBa8-xGa16Sn30笼合物的制备及热电性能

doi:10.11896/cldb.19030096

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Abstract In this work, a successful effort was made in growing Yb-doped type-Ⅷ Yb_xBa_8-xGa₁₆Sn₃₀ clathrate thermoelectric materials via a Sn-flux method.The electrical conductivity, Seebeck coefficient, and Hall coefficient of these samples were measured to analyze their electrical pro-perties,and ZT values were estimated. The results showed that the lattice constant of the material decreased with the increase of Yb content.The conductivity of the sample with x=1.5 was higher than that of other samples in the whole test temperature range, and the conductivity was improved by about 60% compared with that of the sample with x=0, which was due to higher carrier concentration when carrier mobility was comparable.In addition, the conductivity of the samples from 300 K to 583 K decreased with the increase of temperature, showing the characteristics of degenerate semiconductor. After 583 K, the conductivity increased with the increase of temperature, showing the characteristics of semiconductor. Within the test temperature range (300—600 K), the absolute value of Seebeck coefficient for all samples initially increased to a maximum value and subsequently decreased with the increase of temperature. The sample with x=1.5 obtained a large power factor with the maximum va-lue of 2.43×10^-3 W/(m·K²) (at 489 K)due to its high conductivity, and the estimated ZT obtained a maximum value of 1.35 at 489 K.

Key words： Yb doped thermoelectric materials type-Ⅷ clathrate thermoelectric properties

Published: 25 April 2020

CLC number:

Q472⁺.7

Fund:This work was financially supported by the National Natural Science Foundation of China (61864012, 21701140).

About author:: Lanxian Shenis currently a lecturer in School of Energy and Environmental Sciences, Yunnan Normal University. She received her Ph.D. degree in agriculture biological environment and energy engineering from Yunnan Normal University in 2016. Her research inte-rests are new energy materials and devices.
Shukang Deng is currently a professor in School of Energy and Environmental Sciences, Yunnan Normal University. He received his Ph.D. degree in materials sciences from Wuhan University of Technology in 2008. His research interests are new energy materials and devices.

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	SHEN Lanxian
	CHEN Jiali
	LI Decong
	LIU Wenting
	GE Wen
	DENG Shukang

Cite this article:

SHEN Lanxian,CHEN Jiali,LI Decong, et al. Preparation and Thermoelectric Properties of Yb Doped Type-Ⅷ Yb_xBa_8-xGa₁₆Sn₃₀ Clathrate[J]. Materials Reports, 2020, 34(8): 8136-8140.

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http://www.mater-rep.com/EN/10.11896/cldb.19030096 OR http://www.mater-rep.com/EN/Y2020/V34/I8/8136

1 Oiu P F, Liu R H, Yang J, et al. Journal of Applied Physics, 2012, 111(2), 023705.
2 Zhao W Y, Wei P, Zhang Q J, et al. Journal of American Chemical So-ciety, 2009, 131(10), 3713.
3 Li H, Tang X F, Zhang Q J, et al. Applied Physics Letters, 2009, 94(10),102114.
4 Mano S, Onimaru T, Yamanaka S, et al. Physical Review B, 2011, 84(21),214101.
5 Ishii I, Suetomi Y, Fujita T K, et al. Physical Review B, 2012, 85(8),085101.
6 Zhu X H, Chen N, Liu L H, et al. Journal of Applied Physics, 2012,111(7), 07E305.
7 Du B, Saiga Y, Kajisa K, et al. Journal of Applied Physics, 2012, 111(1), 013707.
8 Du B, Saiga Y, Kajisa K, et al. Chemistry of Materials, 2015, 27(5),1830.
9 Wang H F, Cai K F, Li H, et al. Key Engineering Materials, 2008, 368-372,553.
10 Saramat A, Svensson G, Palmqvist A E C, et al. Journal of Applied Physics, 2006, 99(2),023708.
11 Christensen M, Juranyi F, Iversen B B. Physica B:Condensed Matter, 2006, 385-386,505.
12 Nolas G S, Cohn J L, Slack G A, et al. Applied Physics Letters, 1998, 73,178.
13 Kim J H, Okamoto L N, Kishida K. Materials Research Society, 2007,980,217.
14 Cedekrant D Z, Smart A, Snyder G J, et al. Journal of Applied Physics, 2009, 106(7),074509.
15 Okamoto N L, Kishida K, Tanaka K, et al. Journal of Applied Physics, 2006,100(7),073504.
16 Deng S K, Saiga Y, Suekuni K, et al. Journal of Applied Physics, 2010, 108(7),073705.
17 Deng S K, Saiga Y, Kajisa K, et al. Journal of Applied Physics, 2011, 109(10),103704.
18 Tang X F, Li P, Deng S K, et al. Journal of Applied Physics, 2008, 104(1), 013706.
19 Cohn J L, Nolas G S, Fessatidis V, et al. Physical Review Letters, 1999, 82(4),779.
20 Shi X, Kong H,Li C P, et al. Applied Physics Letters, 2008, 92(18),182101.
21 Liu L H, Li F, Wei Y P, et al. Journal of Alloys and Compounds, 2014, 588,271.
22 Liu L H, Wei Y P, Yang S W, et al. International Journal of Modern Physics B, 2014, 28(23),94.
23 Shen L X, Li D C, Liu H X, et al. Journal of Synthetic Crystals, 2015, 44, 2810(in Chinese).
申兰先, 李德聪, 刘虹霞,等.人工晶体学报, 2015, 44,2810.
24 Cutler M, Leavy J F, Fitzpatrick R L. Physical Review, 1964, 133,A1143.
25 Heremans J P, Jovovic V, Toberer E S, et al. Science, 2008, 321(5888),554.
26 Sasaki Y, Kishimoto K, Koyanagi T, et al. Journal of Applied Physics, 2009, 105(7), 073702.
27 Martin J, Nolas G S, Wang H, et al. Journal of Applied Physics, 2007, 102,103719.
28 Blake N P, Latturner S, Bryan J D, et al. Journal of Chemical Physics, 2002, 116(21),9545.
29 Kuznetsov V L, Kuznetsova L A, Kaliazin A E, et al. Journal of Applied Physics, 2000, 87(11),7871.