|
|
|
|
|
|
Flexibilization Strategies of Functional Oxide Thin Film Devices:a Review |
WANG Qian,GAO Neng,ZHANG Tianyao,YAO Guang,PAN Taisong,GAO Min,LIN Yuan
|
State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China |
|
|
Abstract Flexible electronic devices, which are characterized by stretchability and bendability, have attracted tremendous interests because of their great application potential in the fields of information, medicine, energy and so on. Functional oxide thin-film materials have become an important research object in physics and materials science due to their rich electrical, magnetic, optical and unique multi-field coupling properties, and wide usage in the electronic and optoelectronic devices. With more and more devices being introduced to various complex curved surfaces and contact with human or human tissue, the demand for flexible oxide film devices such as stretchability and bendability is becoming more and more urgent. Due to the high temperature required for the growth of high-quality oxide films and the critical requirements for the interface control between the substrate and the film, the integration of oxide films with the stretchable and flexible substrates faces huge challenges. To deposit the oxide film directly on a flexible metal foil or a polymer substrate, it is necessary to overcome the difficulties of controlling the interface between the metal substrate and the film or the poor tolerance of the polymer substrate to the growth temperature. After depositing functional oxide films on rigid substrates, peeling and transferring thin films to a stretchable and flexible substrate is another solution. But the challenge is how to peel the film controllably and completely from the growth substrate. In response to this challenge, the chemical transfer printing technology by etching sacrificial layer and the physical stripping method by van der Waals epitaxy or laser stripping were developed. In this paper, the development of flexibility oxide thin film devices in recent years is reviewed. Main flexibility strategies are summarized, including direct growth on flexible substrates such as metal substrates and polymer substrates, and transfer-printing after chemical etching or physical stripping.The advantages and limits of these strategies are analyzed. The challenges and opportunities in the fabrication of flexible oxide thin film devices are summarized.
|
Published: 15 January 2020
|
|
Fund:This work was supported by the National Basic Research Program of China (2015CB351905), National Natural Science Foundation of China (61825102, 51872038,61901085). |
About author:: Qian Wang received her Master's degree from Sichuan Normal University in June 2019. She is currently pur-suing her Ph.D. at the University of Electronic Science and Technology of China under the supervision of Prof. Yuan Lin. Her research focuses on design and fabrication of flexible electronics. Yuan Lin received the Ph.D. degree in physics from the University of Science and Technology of China in 1999. Currently, she is a professor at the University of Electronic Science and Technology of China. Her main research interests are the development of various oxide thin films for applications in flexible electronic devices. Guang Yao received his Ph.D. degree from University of Electronic Science and Technology of China in 2019. His major is microelectronics and solid-state electronics. Currently, he is a associate professor at the University of Electronic Science and Technology of China. His research interests include design and fabrication of flexible electronics, such as wearable biomedical devices and biodegradable electronics. |
|
|
1 Han S T, Zhou Y, Roy V A L.Advanced Materials, 2013, 38, 5424. 2 Yao G, Kang L, Li J, et al.Nature Communications, 2018, 9, 5349. 3 Kohlstedt H, Mustafa Y, Gerber A, et al.Microelectronic Engineering, 2005, 80, 296. 4 Kim J, Son D, Lee M, et al.Science Advances, 2016, 2, 1501101. 5 Yao G, Jiang D W, Li J, et al.ACS Nano, 2019, 13, 12345. 6 Kai L, Xiong Y, Tang M H, et al.Integrated Ferroelectrics, 2015, 167, 62. 7 Baek S H, Park J, Kim D M, et al.Science, 2011, 334, 958. 8 Long Y, Wei H, Li J, et al.ACS Nano, 2018, 12, 12533. 9 Cheng T, Zhang Y, Lai W Y, et al.Advanced Materials, 2015, 27, 3349. 10 Liao C Z, Zhang M, Yao M Y, et al.Advanced Materials, 2015, 27, 7493. 11 Liu W, Song M S, Kong B, et al.Advanced Materials, 2017, 29, 1603436. 12 Fan F R, Tang W, Wang Z L.Advanced Materials, 2016, 28, 4283. 13 Bao Z N, Chen X D.Advanced Materials, 2016, 28, 4177. 14 Lin S T, Yuk H, Zhang T, et al.Advanced Materials, 2016, 28, 4497. 15 Yan C Y, Kang W B, Wang J X, et al.ACS Nano, 2014, 8, 316. 16 Kim D H, Rogers J A.Advanced Materials, 2008, 20, 4887. 17 Pang C, Lee C, Suh K Y. Journal of Applied Polymer Science, 2013, 130, 1429. 18 Trung T Q, Lee N E.Advanced Materials, 2016, 28, 4338. 19 Segev-Bar M, Haick H.ACS Nano, 2013, 7, 8366. 20 Kim D H, Lu N S, Ma R, et al. Science, 2011, 333, 838. 21 Takei K, Honda W, Harada S, et al. Advanced Healthcare Materials, 2015, 4, 487. 22 Zang Y P, Zhang F J, Di C A, et al.Materials Horizons, 2015, 2, 140. 23 Kim J, Lee M, Shim H J, et al.Nature Communications, 2014, 5, 5747. 24 Yamada T, Hayamizu Y, Yamamoto Y, et al.Nature Nanotechnology, 2011, 6, 296. 25 Yao G, Ji Y D, Liang W Z, et al.Nanoscale, 2017, 9, 3068. 26 Yao G, Gao M, Ji Y D, et al.Scientific Reports, 2016, 6, 3468. 27 Lin Y, Feng D Y, Gao M, et al.Journal of Materials Chemistry C, 2015, 3, 3438. 28 Gao M, Feng D, Yao G, et al.RSC Advances, 2015, 5, 92958. 29 Du H, Liang W Z, Li Y, et al.Journal of Alloys and Compounds, 2015, 642, 166. 30 Du H, Liang W Z, Li Y, et al.Journal of Nanomaterials, 2015, 167569. 31 Du H, Liang W Z, Li Y, et al.Integrated Ferroelectrics, 2015, 159, 127. 32 Liang W Z, Li Z, Bi Z X, et al.Journal of Materials Chemistry C, 2014, 2, 708. 33 Liang W Z, Ji Y D, Nan T X, et al.ACS Applied Materials & Interfaces, 2012, 4, 2199. 34 Liang W Z, Ji Y D, Nan T X, et al.Chinese Physics B. 2012, 21, 067701. 35 Kanno I, Fujii S, Kamada T, et al. Applied Physics Letters, 1997, 70, 1378. 36 Park G T, Choi J J, Ryu J, et al.Applied Physics Letters, 2002, 80, 4606. 37 Sivanandan K, Achuthan A T, Kumar V,et al.Sensors and Actuators A: Physical, 2008, 148, 134. 38 Yeo H G, Ma X K, Rahn C, et al.Advanced Functional Materials, 2016, 1. 39 Seveno R, Carbajo J, Dufay T, et al.Journal of Physics D: Applied Phy-sics, 2017, 50, 165502. 40 Bharadwaja S S N, Kulik J, Akarapu R, et al.IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2010, 57, 2182. 41 Yao M Y, Zhao X, Zhang J X, et al.Nanotechnology, 2018, 30, 085404. 42 Yang T L, Zhang D H, Ma J, et al.Thin Solid Films, 1998, 326, 60. 43 Zhang D H, Yang T L, Ma J, et al. Applied Surface Science, 2000, 158, 43. 44 Choi M C, Kim Y, Ha C S, et al.Progress in Polymer Science, 2008, 6, 581. 45 Khang D Y, Jiang H Q, Huang Y, et al.Science, 2006, 311, 208. 46 Guerin D, Merckling C, Lenfant S, et al.Journal of Physical Chemistry C, 2007, 111, 7947. 47 Chen P, Lau S S, Chu P K, et al. Applied Physics Letters, 2005, 87, 111910. 48 Unnikrishnan S, Jansen H, Berenschot E, et al.Journal of Micromecha-nics and Microengineering, 2008, 18, 064005. 49 Liang W Z, Gao M, Lu C, et al. ACS Applied Materials & Interfaces, 2018, 10, 8341. 50 Liao F Y, Yan Z C, Liang W Z, et al.Journal of Alloys and Compounds, 2017, 705, 468. 51 Liao F Y, Zhu Z, Yan Z C, et al.Journal of Breath Research, 2017, 11, 036002. 52 Liao F Y, Lu C, Yao G, et al.IEEE Electron Device Letters, 2017, 38, 1128. 53 Yang Z, Ko C, Ramanathan S.Annual Review of Materials Research, 2011, 41, 337. 54 Wu C, Feng F, Xie Y.Chemical Society Reviews, 2013, 42, 5157. 55 Lee D, Lee J, Song K, et al.Nano Letters, 2017, 17, 5614. 56 Kumar R T R, Karunagaran B, Mangalaraj D, et al.Sensors and Actuators A: Physical, 2003, 107, 62. 57 Choi H S, Ahn J S, Jung J H, et al.Physical Review B: Condensed Matter, 1996, 54, 4621. 58 Yao G, Pan T S, Yan Z C, et al.Nanoscale, 2018, 10, 3893. 59 Shen L K, Wu L, Sheng Quan, et al.Advanced Materials, 2017, 1702411. 60 Wang H, Shen L, Duan T Z, et al. ACS Applied Materials & Interfaces 2019, 11, 22677. 61 Zhang Y, Shen L K, Liu M, et al.ACS Nano, 2017, 11, 8002. 62 Ji D X, Cai S H, Paudel T R, et al.Nature, 2019, 570, 87. 63 Bitla Y, Chu Y H.FlatChem, 2017, 3, 26 . 64 Jiang J, Bitla Y, Huang C W, et al.Science of Advanced Materials, 2017, 3, 1700121. 65 Amrillah T, Bitla Y, Shin K, et al.ACS Nano, 2017, 11, 6122. 66 Gao W X, You L, Wang Y J, et al.Advanced Electronic Materials, 2017, 1600542,1. 67 Hou W X, Zhou Z Y, Zhang L, et al.ACS Applied Materials & Interfaces, 2019, 11, 21727. 68 Li M L, Wang Y B, Wang Y, et al.Ceramics International, 2017, 43, 15442. 69 Chu Y H.npj Quantum Materials, 2017, 2, 67. 70 Park K, Son J H, Hwang G T, et al.Advanced Materials, 2014, 26, 2514. 71 Kim S, Son J H, Lee S H, et al.Advanced Materials, 2014, 26, 7480. 72 Lee H E, Kim S, Ko J, et al.Advanced Functional Materials, 2016, 26, 6170. 73 Kim S, Lee H E, Choi H, et al.ACS Nano, 2016, 10, 10851. 74 Yen M, Bitla Y, Chu Y H.Materials Chemistry and Physics, 2019, 234, 185. 75 Ma C H, Lin J C, Liu H J, et al.Applied Physics Letters, 2016, 108, 253104. 76 Tsai M F, Jiang J, Shao P W, et al.ACS Applied Materials & Interfaces, 2019, 11, 25882. |
|
|
|