Materials Reports 2019, Vol. 33 Issue (z1): 1-7 |
INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
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Progress in Preparation of g-C3N4 with Different Morphologies |
GUO Jipeng1, WANG Jingfeng2,3, LIN Lin2, HE Dannong1,2
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1 School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 2 National Engineering Research Center for Nanotechnology, Shanghai 200241 3 Shanghai University of Medicine & Health Sciences, Shanghai 201318 |
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Abstract Semiconductor photocatalysts have important application prospects in solving energy shortages and environmental pollution problems. In recent years, a polymer semiconductor g-C3N4 has received extensive attention due to its unique electronic structure, high thermal stability, metal-free composition, and low cost. However, g-C3N4 also has its own shortcomings, such as small specific surface area, wide band gap, photo-generated electron-hole pairs, and so on, which severely limits its practical application. Morphology regulation has an important influence on the electronic structure of g-C3N4, leading to the improvement of the photocatalytic activity. In this paper, the preparation methods of g-C3N4 with different morphologies, including g-C3N4 spheres, nanosheets, nanotubes and nanorods are reviewed. The effect of preparation method on the various morphologies and photocatalytic activities of the carbon nitride is also discussed. Finally, the future application of g-C3N4 materials is indicated.
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Published: 05 July 2019
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About author:: Jipeng Guo received his B.E degree in material scie-nce and engineering from Wuhan University of Technology in 2016. He is currently pursuing his master degree at School of Material Science and Engineering Shanghai Jiao Tong University under the supervision of Prof. Dannong He. His research has focused on the appliance of polymer semiconductor in the photocatalytic hydrogen evolution. Jingfeng Wang received his Ph.D. in University of Shanghai Jiao Tong university. He is currently working as a researcher in the National Engineering Research Center for Nanotechnology and Applications and enga-ging in the development and preparation of nanofunctional materials. He is a recipient of the Shanghai Ta-lent Development Fund. He has extensive research experience in the preparation and application of porous materials and inorganic semiconductors. |
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