纳米金属银、铜辅助化学刻蚀制绒金刚线切割多晶硅的研究

doi:10.11896/j.issn.1005-023X.2018.21.004

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Abstract The diamond wire sawn multicrystalline silicon (DWS mc-Si) was textured by nano silver and copper catalyzed chemical etching method, and the effects of metal species on textured morphology and anti-reflection performance of DWS mc-Si were studied in detail. The results showed that the textured morphology of silicon wafer was greatly influenced by various metal species. Compared with the silicon nanowires arrays structure form nano Ag-assisted etching, the inverted pyramid structure formed by nano Cu-assisted etching has a more outstanding performance. The large area micron-size inverted pyramids can more perfectly balance anti-reflection and surface passivation. Moreover, inverted pyramids texturization can significantly eliminate the surface saw marks. When the etching time is 15 min, the resulting inverted pyramid structure is the most uniform and the average reflectivity of textured sample decrease from 41.8% to 5.8% in the wavelength range of 300—1 100 nm. The superior anti-reflection performance and excellent saw marks elimination ability show a huge potential application in high-efficiency solar cells based on DWS mc-Si wafers.

Key words： diamond wire sawn multicrystalline silicon saw marks copper-assisted chemical etching silicon nanowires inverted pyramid

Published: 21 November 2018

CLC number:

TM914.4

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	Articles by authors
	ZOU Yuxin
	QIU Jiajia
	XI Fengshuo
	YANG Xi
	LI Shaoyuan
	MA Wenhui

Cite this article:

ZOU Yuxin,QIU Jiajia,XI Fengshuo, et al. Study on Nano Silver, Copper Assisted Chemical Etching Texturing of Diamond Wire Sawn Multicrystalline Silicon Wafers[J]. Materials Reports, 2018, 32(21): 3706-3711.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.21.004 OR http://www.mater-rep.com/EN/Y2018/V32/I21/3706

1 Hardin C W, Qu J, Shih A J.Fixed abrasive diamond wire saw slicing of single-crystal silicon carbide wafers[J].Materials and Manufacturing Processes,2004,19(2):355.
2 Gassilloud R, Ballif C, Gasser P, et al.Deformation mechanisms of silicon during nanoscratching[J].Physica Status Solidi,2005,202(15):2858.
3 Jang J I, Lance M J, Wen S Q, et al.Indentation-induced phase transformations in silicon: Influences of load,rate and indenter angle on the transformation behavior[J].Acta Materialia,2005,53(6):1759.
4 Zhou Z Z, Wu Z, Feng K P.A review on surface texturing technology for multicrystalline silicon[J].Materials Review A: Review Papers,2015,29(5):55(in Chinese).
周兆忠,吴喆,冯凯萍.多晶硅表面制绒技术研究现状[J].材料导报:综述篇,2015,29(5):55.
5 Niu Y C, Liu H T, Liu X J, et al.Study on nano-pores enlargement during Ag-assisted electroless etching of diamond wire sawn polycrystalline silicon wafers[J].Materials Science in Semiconductor Processing,2016,56:119.
6 Oh J H, Yuan H C, Branz H M.An 18.2%-efficient black-silicon solar cell achieved through control of carrier recombination in nanostructures[J].Nature Nanotechnology,2012,7(11):743.
7 Zhong S H, Huang Z G, Lin X X, et al.High-efficiency nanostructured silicon solar cells on a large scale realized through the suppression of recombination channels[J].Advanced Materials,2015,27(3):555.
8 Um H D, Park K T, Jung J Y, et al.Incorporation of a self-aligned selective emitter to realize highly efficient (12.8%) Si nanowire solar cells[J].Nanoscale,2014,6(10):5193.
9 Kraft A, Wolf C, Bartsch J, et al.Long term stability of copper front side contacts for crystalline silicon solar cells[J].Solar Energy Materials Solar Cells,2015,136(55):25.
10 Osinniy V, Bomholt P, Nylandsted Larsen A, et al.Factors limiting minority carrier lifetime in solar grade silicon produced by the metallurgical route[J].Solar Energy Materials and Solar Cells,2011,95(2):564.
11 Lopez R, Gomez R.Band-gap energy estimation from diffuse reflectance measurements on sol-gel and commercial TiO₂: A comparative study[J].Journal of Sol-gel Science and Technology,2012,61(1):1.
12 Yu L J, Duan J S.Research and analysis of influence factor of lifetime of polysilicon[J].Equipment for Electronic Products Manufacturing,2012,41(6):26(in Chinese).
于丽君,段晋胜.多晶硅片少子寿命的影响因素研究与分析[J].电子工业专用设备,2012,41(6):26.
13 Kato S, Yamazaki T, Kurokawa Y, et al.Influence of fabrication processes and annealing treatment on the minority carrier lifetime of silicon nanowire films[J].Nanoscale Research Letters,2017,12(1):242.
14 Yu D, Wang S, Li L, et al.One-step Cu-assisted chemical etching on polycrystalline silicon[J].Micronanoelectronic Technology,2014,51(4):249.
15 Wang Y, Yang L X, Liu Y P, et al.Maskless inverted pyramid texturization of silicon[J].Scientific Reports,2015,5:10843.
16 Wang Y, Liu Y P, Yang L X, et al.Micro-structured inverted pyramid texturization of Si inspired by self-assembled Cu nanoparticles[J].Nanoscale,2017,9:907.
17 Zhang X G.Electrochemistry of silicon and its oxide[M].Netherlands: Kluwer Academic/Plenum Publisher,2011:318.
18 Huang Z P, Geyer N, Werner P, et al.Metal-assisted chemical et-ching of silicon: A review[J].Advanced Materials,2011,23(2):285.