高导热金刚石/铜电子封装材料:制备技术、性能影响因素、界面结合改善方法

doi:10.11896/j.issn.1005-023X.2018.11.011

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Abstract  The continuous evolution of the electronics industry causes gradual obsolescence of the second generation of heat sink materials, such as tungsten/copper packaging materials, molybdenum/copper packaging materials and silicon carbide/aluminum packaging materials. Diamond holds the highest known thermal conductivity of 2 300 W/(m·K), and copper owns the second hig-hest thermal conductivity (401 W/(m·K)) after silver amongst the rich variety of metals. The composite materials of diamond and copper enjoy many special advantages: (Ⅰ) high thermal conductivity and high strength; (Ⅱ) the thermal expansion coefficient adjustable by varying diamond and copper contents, enabling thermal expansion matching with semiconductor materials such as silicon and germanium; (Ⅲ) more cost-effective than diamond/silver composites, and more thermally conductive than diamond/aluminum, tungsten/copper and molybdenum/copper, etc. Thus diamond/copper composites have been regarded as an ideal candidate material for electronic packaging.
    A diverse range of techniques can be used to fabricate diamond/copper composites, but the powder metallurgy, spark plasma sintering and liquid infiltration are the most applicable and extensively researched methods. Liquid infiltration techniques can be classified into pressureless infiltration and pressure-assisted infiltration, which have displayed the features of low cost and high operability and become the hot topic in recent years. And researchers have so far successfully obtained the diamond/copper composite with a thermal conductivity of up to 900 W/(m·K).
    On the other hand, plenty of works have proved that poor interfacial wettability between diamond and copper leads to unsatisfactory density, and in consequence, limited promotion potential of thermal conductivity. This makes the issue of wettability a crucial point for fabricating diamond/copper composites, and urges intensive research efforts to seek countermeasures. At present, there are mainly two reasonable approaches: (Ⅰ) the formation of alloys consisting of copper and active elements, e.g. B, Cr, etc. which can be added to the synthesis system during the fabrication process; (Ⅱ) the encapsulation of diamond with a uniform layer of carbide before the fabrication of composite, by means of electroless plating, diffusion sintering, salt bath treatment or magnetron sputtering.
    In this paper, we provides a summary of the research progress and major production techniques of diamond/copper composites, a survey on the main influencing factors upon the composite’s thermal expansion coefficient and thermal conductivity, an introduction of the feasible methods to improve interfacial wettability, as well as an outlook on this prospective electronic packaging material.

Key words： diamond/copper composite thermal conductivity thermal expansion coefficient electronic packaging

Published: 20 July 2018

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TB331

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	ZHAO Long
	SONG Pingxin
	ZHANG Yingjiu
	YANG Tao

Cite this article:

ZHAO Long,SONG Pingxin,ZHANG Yingjiu, et al. Diamond-Copper Composites with High Thermal Conductivity Used for Electronic Packaging: Fabrication Techniques, Performance Influencing Factors and Interfacial Strengthening Methods[J]. Materials Reports, 2018, 32(11): 1842-1851.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.11.011 OR http://www.mater-rep.com/EN/Y2018/V32/I11/1842

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