立方砷化硼晶体生长、性能及应用研究进展

doi:10.11896/cldb.22110207

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Abstract Cubic boron arsenide(c-BAs) is a new type of group Ⅲ-Ⅴ compound semiconductor material with indirect band gap and zinc blend structure. First-principles calculations predict that c-BAs have extremely high thermal conductivity, which has stimulated a great deal of research on crystal synthesis and properties. In particular, recent breakthroughs in crystal growth, such as the preparation of millimeter-size high quality c-BAs single crystals by chemical vapor transport (CVT) method, with thermal conductivity up to 1 300 W·m^-1·K^-1 at room temperature, have attracted great attention and further encouraged the theoretical and experimental research. In this review, we summarize the recent research progress in the theoretical calculation, crystal growth, physical properties and material application of c-BAs, describe the challenges in the preparation of the crystal, and prospect its development prospects.

Key words： c-BAs crystal growth chemical vapor transport thermal conductivity thermal management materials

Published: 10 September 2024 Online: 2024-09-30

CLC number:

TN304

Fund:National Key R & D Program of China (2021YFB3501700),Shanghai Science and Technology Committee (STCSM) Science and Technology Innovation Program (22N21900400, 23N21900100 ),National Natural Science Foundation of China (12104311),Science and Technology Talent Development Fund for Young and Middle-aged Teachers of Shanghai Institute of Technology (ZQ2022-3),Shanghai Chenguang Program (22CGA74).

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	Articles by authors
	WANG Yuanyuan
	ZHANG Lu
	CHENG Xixi
	QIAN Qi
	XU Huan
	XU Hua
	YANG Xuezhou
	YANG Bobo
	ZOU Jun

Cite this article:

WANG Yuanyuan,ZHANG Lu,CHENG Xixi, et al. Research Progress in Crystal Growth, Physical Properties and Application of Cubic Boron Arsenide[J]. Materials Reports, 2024, 38(17): 22110207-10.

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http://www.mater-rep.com/EN/10.11896/cldb.22110207 OR http://www.mater-rep.com/EN/Y2024/V38/I17/22110207

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