IC互连金属及其阻挡层化学机械抛光的研究进展

doi:10.11896/cldb.23030074

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Abstract The progress of integrated circuit can be used as an important indicator to measure the economic strength of a country, so as to reflect the overall strength of the country. Among the many processes of integrated circuit, CMP is one of the key manufacturing technologies, and it is also the only technology that can achieve global and local flattening which is widely used. Chip interconnection is a post-stage process, and the current technologies mainly include copper interconnection and cobalt interconnection. When using these interconnection technologies, the performance of the chip will inevitably be affected, including the metal diffusion problem, the bond strength between the film and the substrate, and so on. We choose to add different barrier layers to solve these problems. Both interconnect metal and barrier layer must undergo CMP process, which directly determines chip yield and reliability. The limitations in the research of CMP interconnection and barrier layer are introduced briefly.In this paper, the materials of various technical joint barrier layers and the substitution of interconnect metals are reviewed.

Key words： copper interconnection cobalt interconnection ruthenium interconnection tantalum/tantalum nitride barrier cobalt barrier ruthenium barrier chemical-mechanical polishing

Published: 25 August 2024 Online: 2024-09-10

CLC number:	TN305.2
	TN304.9

Fund:Natural Science Foundation of Hebei Province (F2022202072), Youth Science Foundation Project (61704046).

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	Articles by authors
	LI Wenhaoyu
	GAO Baohong
	HUO Jinxiang
	HE Bin
	LIANG Bin
	LIU Mingyu

Cite this article:

LI Wenhaoyu,GAO Baohong,HUO Jinxiang, et al. Research Progress in Chemical-Mechanical Polishing of IC Interconnect Metals and Their Barrier Layers[J]. Materials Reports, 2024, 38(16): 23030074-8.

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http://www.mater-rep.com/EN/10.11896/cldb.23030074 OR http://www.mater-rep.com/EN/Y2024/V38/I16/23030074

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