电场作用下Cu/Cu<sub>3</sub>Sn界面原子扩散行为的分子动力学模拟

doi:10.11896/cldb.19010083

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Abstract Generally, the failure of solder joint in electronic products may cause the entire product to be scrapped. In this case, the recycling of electronic components is of great significance for saving resources. It is worth pointing out that the effective reuse of electronic components rely on perfect separation of welding interface of them. Aiming at paving the way for developing a feasible interface separation technique theoretically, mole-cular dynamics simulation was carried out to study the effects of electric field direction and strength on the diffusion behavior of atoms at Cu/Cu₃Sn interface. It was found that the direction of the electric field played a critical role in affecting the diffusion behavior of the atoms at Cu/Cu₃Sn interface. Under the same conditions, the diffusion of atoms were more likely to occur in the models under a positive electric field than that in the one without electric field. Furthermore, study on the diffusion behavior of atoms at Cu/Cu₃Sn interface under electric fields of diverse intensities were conducted. As could be seen from the results, the increase of electric field intensities contributed to raising the intrinsic diffusion coefficient of Cu₃Sn atoms near the interface, while lowering the intrinsic diffusion coefficient of atoms in Cu crystal, so as to enlarge the difference in diffusion coefficient of interface atoms. Consequently, more obvious Kirkendall effect would be produced, which was beneficial to the separation of Cu/Cu₃Sn interface.

Key words： Cu/Cu₃Sn molecular dynamics simulation electric field intrinsic diffusion coefficient

Published: 03 January 2020

CLC number:

TG406

About author:: Liting Guois a postgraduate student at Beijing University of Technology. She is mainly engaged in the research of electronic packaging and connection materials and their reliability evaluation;Xiaoyan Li received his Ph.D. degree in materials from Harbin Institute of Technology in 1992. He has been a professor at Beijing University of Technology since 1998 and a doctoral tutor since 2000. He is mainly engaged in research work on microelectronic assembly materials and technologies, nondestructive testing and evaluation of materials, and information engineering technology. He has published more than 100 papers in important journals at home and abroad.

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	GUO Liting
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Cite this article:

GUO Liting,LI Xiaoyan,YAO Peng, et al. Molecular Dynamics Simulation of Diffusion Behavior of Atoms at the Interface of Cu/Cu₃Sn Under Electric Field[J]. Materials Reports, 2020, 34(2): 2137-2141.

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http://www.mater-rep.com/EN/10.11896/cldb.19010083 OR http://www.mater-rep.com/EN/Y2020/V34/I2/2137

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