航天用氮化镓材料的研究进展

doi:10.11896/cldb.22050023

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Abstract Gallium nitride (GaN) materials have received extensive attention due to their excellent electrical properties and are expected to find important applications in aerospace engineering. In this paper, the characteristics of GaN materials are briefly expounded,and then the research status of GaN materials in high electron mobility transistors(AlGaN/GaN HEMTs), space solar cells, ultraviolet detectors (UV detectors) and other fields is reviewed and analyzed. Finally, the future development direction and suggestions are given from the perspectives of the development of new GaN devices, the evaluation of space environment adaptability, and the reinforcement of GaN devices.

Key words： gallium nitride electrical property space environment radiation effect reinforcement technique

Published: 25 November 2022 Online: 2022-11-25

CLC number:

TB303

Fund:National Natural Science Foundation of China (61904007)

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	Articles by authors
	JI Qizheng
	WANG Yifan
	HU Xiaofeng
	LI Xingji
	YANG Jianqun
	LIU Shanghe

Cite this article:

JI Qizheng,WANG Yifan,HU Xiaofeng, et al. Research Progress on Gallium Nitride Materials for Aerospace Applications[J]. Materials Reports, 2022, 36(22): 22050023-6.

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http://www.mater-rep.com/EN/10.11896/cldb.22050023 OR http://www.mater-rep.com/EN/Y2022/V36/I22/22050023

1 Amano H, Sawaki N, Akasaki I, et al. Applied Physics Letters, 1986, 48(5), 353.
2 Ji Q Z, Liu J, Yang M, et al. Spacecraft Environment Engineering, 2022, 39(4), 436(in Chinese).
季启政, 刘峻, 杨铭, 等. 航天器环境工程, 2022, 39(4), 436.
3 Nakasha Y, Masuda S, Makiyama K, et al. In: IEEE Compound Semiconductor Integrated Circuit Symposium(CSICS). Monterey, CA, USA, 2010.
4 Micovic M K, Kurdoghlian A, Hashimoto P, et al. In: Electron Devices Meeting. Naples, Italy, 2006, pp. 1.
5 Jaeger J C, Delage S L, Dambrine G, et al. In: European Gallium Arsenide and Other Semiconductor Application Symposium. Paris, France, 2005, pp. 229.
6 Palacios T, Chakrabortry A, Rajan S,et al. IEEE Electron Device Letters, 2005, 26(11), 781.
7 Khan M A, Kuznia J N, Olson D T, et al. Applied Physics Letters, 1994, 65(1), 64.
8 Geens K, Li X, Zhao M, et al. In: 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications(WiPDA).Raleigh, NC,USA,2019 pp.292.
9 Wang Y H, Liang Y C, Samudra G S, et al. IEEE Electron Device Letters, 2015, 36(4), 381.
10 Huang S, Liu X, Wang X, et al. IEEE Transactions on Electron Devices, 2018, 65(1), 207.
11 Liu X, Chiu H C, Liu C H, et al. Journal of the Electron Devices Society, 2020, 8, 229.
12 Yu C J, Hu C W, Wu M C, et al. IEEE Electron Device Letters, 2020, 41(5),673.
13 Kim D S, Lee J H, Yeo S, et al. IEEE Transactions on Nuclear Science, 2018, 65(1), 579.
14 Bhuiyan M A, Zhou H, Chang S J, et al. IEEE Transactions on Nuclear Science, 2018, 65(1), 46.
15 Wu J, Walukiewicz W, Yu K M, et al. Applied Physics Letters, 2002, 80(25), 4741.
16 Naoi H, Kurouchi M, Muto D, et al. Physica Status Solidi(A),2006, 203(1), 93.
17 Yamamoto A, Islam M R, Kang T T, et al. Physica Status Solidi(C),2010, 7(7-8), 2097.
18 Mukhtarova A, Valdueza-Felip S, Durand C, et al. Physica Status Solidi(C), 2013, 10(3), 350.
19 Ould S H S, Adaine A, Fressengeas N. Materials Science in Semiconductor Processing, 2016, 41, 219.
20 Mahala P,Singh S,Pal S, et al. Applied Physics A,2016,639, 1.
21 Chun T Y, Wei C L, Cheng H Y, et al.IEEE Transactions on Electron Devices, 2015, 62(5),1473.
22 Mukhtarova A,Valdueza-Felip S, Redaelli L, et al. Applied Physics Letters,2016,108(16), 161907.
23 Chang J Y, Yen S H, Chang Y A, et al. IEEE Transactions on Electron Devices,2013,60(12), 4140.
24 Jani O, Honsberg C, Asghar A, et al. In: Proc 31^stIEEE Photovoltaic Specialists Conference. Vista, FL,2005, pp.37.
25 Jani O,Ferguson I,Honsberg C,et al. Applied Physics Letters, 2007,91(13), 132117.
26 Singh R, Doppalapudi D, Moustakas T D, et al. Applied Physics Letters, 1997, 70(9), 1089.
27 Bae S Y, Jung B O,Lekhal K, et al. Japanese Journal of Applied Phy-sics, 2016, 55(5S), 05FGO3.
28 Adaine A, Hamady S, Fressengeas N. Superlattices & Microstructures, 2017, 107,267.
29 Yang C B, Wang X L, Xiao H L, et al. Physica Status Solidi A, 2007, 204(12), 4288.
30 Chen X, Matthews K, Hao D, et al. Physica Status Solidi A, 2008, 205(5), 1103.
31 Valdueza F S, Ajay A, Redaelli L, et al. Solar Energy Materials & Solar Cells,2017,160, 355.
32 Wu S, Cheng L, Wang Q. Superlattices & Microstructures, 2018, 119,9.
33 Monroy E, Calle F, Muioz E,et al. Applied Physics Letters,1999,74(22), 3401.
34 Li Y, Liu Y, Yang G, et al. Optics Express, 2021, 29(4), 5466.
35 Lee M L, Sheu J K, Su Y K. IEEE Electron Device Letter, 2004, 25(9), 593.
36 Ozbay E, Biyikli N, Kimukin I, et al. IEEE Journal of Selected Topics in Quantum Electronics, 2004, 10(4), 759.
37 You D, Xu J T, Tang Y W, et al. Chinese Journal of Semiconductors, 2006,27(10), 1861(in Chinese).
游达,许金通,汤英文,等.半导体学报,2006, 27(10), 1861.
38 Kalra A, Rathkanthiwar S, Muralidharan R, et al. IEEE Photonics Technology Letters, 2019, 31(15), 1237.