n-GaN上Au/Zr和Au/Ti金属电极的界面反应和金属间互扩散行为对比研究

doi:10.11896/cldb.21050131

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Abstract Electrode contact is a very important issue in making semiconductor devices. The ohmic contact generated by metal electrode and semiconductor is the guarantee of device service with high efficiency and low power consumption, which directly affects the performance of devices. Previous studies of ohmic contact mainly focused on the selection of metal electrode system and treatment conditions to look for the scheme with the lowest specific contact resistance. This work breaks through the shackles and discusses the feasibility of metal from the perspective of the formation mechanism of ohmic contact. The contact mechanism of Au(300 nm)/Zr(30 nm)/n-GaN and Au(300 nm)/Ti(30 nm)/n-GaN structure was studied under the conditions of annealing at 650 ℃ for 60 s and 850 ℃ for 30 s. UV lithography was adopted to define the dot transmission line model, and metal electrode samples were prepared on GaN with magnetron sputtering equipment. The counter-diffusion and interfacial reaction of electrode samples were analyzed. The results indicate that compared with Au/Ti/n-GaN, the Au/Zr/n-GaN samples are less affected by temperature, and the Zr-N compound generated by interfacial solid-state reaction has superior thermal stability, which can help the device work more stably at high temperature and high pressure; less Ga alloy phase is produced when Zr comes into contact with gallium nitride, which helps the device to transmit carriers with tunneling mechanism; the interface pores of Au/Zr/n-GaN samples are smaller and the interface reaction with gallium nitride is moderate; the surface of Au/Zr/n-GaN sample is more flat, which is suitable for the work with high power and high current. In addition, it can be comparatively concluded that the performance of the device will be affected by the preparation and purification of metal, adding barrier metal, the method of making metal electrode, the stability of barrier metal, the interface reaction degree between metal and gallium nitride, and the surface roughness of electrode. Higher performance requirements of the device can be achieved by using Zr instead of Ti as n-type GaN ohmic contact electrode, which is a metal material with a broad application prospect, and is of great help to the R&D and improvement of GaN devices.

Key words： n-type GaN Au/Zr ohmic contact electrode mutual diffusion behavior interface reaction

Published: 10 November 2022 Online: 2022-11-03

CLC number:

O472+.4

Fund:National Natural Science Foundation of China (61774147) and Technology Development Project of Nanjing Youtian Metal Technology Co., Ltd. (Y8H1020M00).

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	ZHANG Kexin
	LI Gengwei
	YANG Shaoyan
	WEI Jie

Cite this article:

ZHANG Kexin,LI Gengwei,YANG Shaoyan, et al. Comparison Study on the Interfacial Reaction and Intermetallic Interdiffusion Behavior of Au/Zr and Au/Ti Metal Electrodes on n-GaN[J]. Materials Reports, 2022, 36(21): 21050131-6.

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http://www.mater-rep.com/EN/10.11896/cldb.21050131 OR http://www.mater-rep.com/EN/Y2022/V36/I21/21050131

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