NH<sub>3</sub>和N<sub>2</sub>混合等离子体预处理对锗MOS器件性能的影响

doi:10.11896/cldb.20050209

Abstract
Figure/Table
References
Related Citation (7)

Download:

Full Text ( PDF ) (2814KB)
Export: BibTeX | EndNote (RIS)

Abstract The germanium substrates were pretreated in situ with a mixture of NH₃ and N₂ plasma, and the native oxide GeO_xwere transformed to GeO_yN_z. The XPS results showed that with the increase of pretreatment time, the thickness of GeO_yN_z increased slightly. For the germa-nium MOS capacitor samples with structure of 500 nm Al/20 nm Ti/10 nm HfO₂/Ge at the bias voltage of 1 V, the leakage current of the samples without in-situ plasma pretreatment were an order of 1×10^-4A/cm², while the leakage current of the samples under the condition of 120 s NH₃/N₂ mixed plasma pretreatment were reduced to an order of 1×10^-5A/cm². The C-V curves of all samples pretreated by NH₃/N₂ plasma showed no obvious warpage deformation, indicating that the interface trap charge density of the samples was low; according to the calculation of C-V curve, the equivalent capacitance of the sample for 60 s NH₃/N₂ mixed plasma pretreatment is about 17, which is less than the dielectric constant value of ideal HfO₂, indicating that there is still a non-negligible interface capacitance under the pretreatment condition. Compared with other pretreatment methods,in-situ pretreatment of germanium substrate by NH₃/N₂ mixed plasma can more effectively improved the quality of interface of atomic layer deposited HfO₂ on germanium substrate, inhibited the diffusion of Ge to HfO₂, and played an important role in limiting the trap charge the interface. It had more potential advantages in improving the performance of Ge-MOS devices in industrial production.

Key words： germanium MOS atomic layer deposition in situ plasma pretreatment hafnium dioxide film high dielectric constant leakage current density

Published: 03 August 2021

CLC number:

TM21

Fund:Key Research and Development Program of High Performance Computing in the 13th Five-Year Plan of the Ministry of Science and Technology of China (2016YFB0200205), Shanghai R&D Public Service Platform Construction Project in 2018 (18DZ2295400), Jue Ce Zi Xun Research Fund of Shanghai Jiao Tong University (JCZXSJB2019-005,JCZXSJB2018-022).

About author:: Liying Wu received her Ph.D. degree in condensed matter physics from Xi'an Jiaotong University in 2011. She is currently an assistant researcher in Center for Advanced Electronic Materials and Devices in Shanghai Jiao Tong University. She has published more than 10 papers in academic journals. Her research interests are preparation of advanced films and nano-devices proces-sing technology.

	Service
	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors
	WU Liying
	BAI Rongxu
	QU Minni
	FU Xuecheng
	TIAN Miao
	MA Ling
	WANG Ying
	CHENG Xiulan

Cite this article:

WU Liying,BAI Rongxu,QU Minni, et al. Effect of NH₃ /N₂ Mixed Plasma Pretreatment on the Performance of Ge MOS Devices[J]. Materials Reports, 2021, 35(14): 14012-14016.

URL:

http://www.mater-rep.com/EN/10.11896/cldb.20050209 OR http://www.mater-rep.com/EN/Y2021/V35/I14/14012

1 Toriumi A, Nishimura T. Japanese Journal of Applied Physics, 2017, 57, 010101.
2 Shang H, Frank M M, Gusev E P, et al. IBM Journal of Research and Development, 2006, 50, 377.
3 Gusev E P, Shang H, Copel M, et al. Applied Physics Letters, 2004, 85, 2334.
4 Houssa M, Pourtois G, Caymax M, et al. Surface Science, 2008, 602, L25.
5 Pourtois G, Houssa M, Delabie A, et al. Applied Physics Letters, 2008, 92, 032105.
6 Taoka N, Harada M, Yamashita Y. Applied Physics Letters, 2008, 92, 113511.
7 Li X F, Liu X J, Zhang W Q, et al. Applied Physics Letters, 2011, 98, 162903.
8 Zhang R, Huang P C, Taoka N, et al. Applied Physics Letters, 2016, 108, 052903.
9 Wang X, Xiang J, Wang W, et al. Applied Surface Science, 2015, 357, 1857.
10 Wang X, Xiang J, Zhao C, et al. In: IEEE Electron Devices Technology and Manufacturing Conference (EDTM). Japan, 2017, pp.162.
11 Hosoi T, Kutsuki K, Okamoto G, et al. Applied Physics Letters, 2009, 94, 202112.
12 Xie Q, Musschoot J, Schaekers M, et al. Applied Physics Letters, 2010, 97, 222902.
13 Zhou L, Wang X, Han K, et al. IEEE Transactions on Electron Devices, 2019, 66,1669.
14 Li X F, Liu X J, Cao Y Q, et al. Applied Surface Science,2013,264,783.
15 Matsubara H, Sasada T, Takenaka M. Applied Physics Letters, 2008, 93, 032104.
16 Kita K, Suzuki S, Nomura H, et al. Japanese Journal of Applied Physics, 2008, 47, 2349.
17 Sasada T, Nakakita Y, Takenaka M, et al. Journal of Applied Physics, 2009, 106, 073716.
18 Chui C O, Ito F, Saraswat K C. IEEE Electron Device Letters, 2004, 25, 613.
19 Kuzum D, Pethe A J, Krishnamohan T, et al. In: Technical Digest—International Electron Devices Meeting.Washington DC, USA, 2007, pp. 723.
20 Tatsuro M, Tetsuji Y, Masayasu N, et al. Applied Physics Letters, 2004,85,3181.
21 Oshima Y, Shandalov M, Sun Y, et al. Applied Physics Letters, 2009, 94, 183102.
22 Cao Y Q, Chen J, Liu X J, et al. Applied Surface Science, 2015, 325, 13.
23 Zhao Y, Wang L, Zhang J L, et al. Acta Physico-Chimica Sinica, 2014, 30(4), 738 (in Chinese).
赵越,王丽,张家良,等. 物理化学学报,2014, 30(4), 738.
24 Taylor J A, Lancaster G M, Rabalais J W. Journal of Electron Spectroscopy Related Phenomena, 1978, 13, 435.
25 Larkins F P, Lubenfeld A. Journal of Electron Spectroscopy Related Phenomena, 1979, 15, 137.
26 Cao P J, Zhu D L, Ma X C, et al. Journal of Vacuum Science and Technology, 2005, 25(5), 328 (in Chinese).
曹培江,朱德亮,马晓翠,等. 真空科学与技术学报, 2005,25(5), 328.
27 Pashutski A, Folman M. Surface Science, 1989, 216, 395.
28 Chi X W, Lan X L, Lu C, et al. Materials Research Express, 2016, 3, 035012.
29 Maeda T, Nishizawa M, Morita Y, et al. Applied Physics Letters, 2007, 90, 072911.
30 Wang Y Y,Zhang X,Liu X Y, et al. Science in China(Series E):Technological Sciences,2008,38(6),921 (in Chinese).
王阳元,张兴,刘晓彦,等. 中国科学E辑:信息科学,2008,38(6),921.
31 Won Y, Park S, Koo J, et al. Applied Physics Letters, 2005, 87, 262901.