CuSCN作为石墨烯/硅异质结太阳能电池无机界面层的数值模拟

doi:10.11896/cldb.20040213

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Abstract Interface engineering is one of the effective methods to improve the performance of graphene/silicon heterojunction solar cells, but until now the interface layer materials suffer from the problems of high price and poor stability. In this paper, the performance of graphene/silicon solar cells was studied via AFORS-HET software. An inorganic interface layer of CuSCN was adopted to reduce the cost and improving the performance and stability of the solar cells. The role of the CuSCN interface layer as well as the effects of the hole mobility of the CuSCN layer and the valence band offset of the CuSCN/n-Si on the performance of solar cells were investigated. The results show that the introduction of the CuSCN interface layer and the increase of the hole mobility of the CuSCN layer are beneficial to improving the photovoltaic performance of the devices. When the valence band offset of the CuSCN/n-Si interface is greater than -0.1 eV, the CuSCN layer can act as the electron-blocking and hole-transporting layer. Particularly, when the valence band offset of the CuSCN/n-Si interface is equal to 0.2 eV, the graphene/CuSCN/silicon heterojunction solar cell model can achieve the best photovoltaic conversion efficiency of 25.8%. This study helps to reveal the effect of various factors on the performance of the graphene/CuSCN/Si solar cells, and provides a solution for the preparation of low-cost and high-efficiency graphene/silicon solar cells.

Key words： graphene Schottky junction interface engineering copper(I) thiocyanate numerical simulation band offset

Published: 23 February 2021

CLC number:

TM914. 4

Fund:This work was financially supported by the Shenzhen Science and Technology Innovation Committee (JCYJ20190809160401653) and Guangdong Basic and Applied Basic Research Foundation (2020A1515011187).

Corresponding Authors: qijin.cheng@xmu.edu.cn

About author:: Ling Zhang is a postgraduate student in College of Energy of Xiamen University and is supervised by associate professor Qijin Cheng. His research mainly focuses on the field of photovoltaic devices and photovoltaic materials.
Qijin Cheng received his Ph. D. degree in Nanyang Technological University in 2008. He is currently an associate professor in School of Electronic Science and Engineering of Xiamen University and focuses on the research of low-dimensional semiconductor nanomate-rials and nanodevices.

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	ZHANG Ling
	YANG Qinru
	YU Meng
	HUANG Ruiming
	CHENG Qijin

Cite this article:

ZHANG Ling,YANG Qinru,YU Meng, et al. Numerical Simulation of Graphene/Silicon Solar Cells Using CuSCN as an Inorganic Interface Layer[J]. Materials Reports, 2021, 35(4): 4001-4006.

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http://www.mater-rep.com/EN/10.11896/cldb.20040213 OR http://www.mater-rep.com/EN/Y2021/V35/I4/4001

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