喷枪扫描速率对常压冷等离子喷涂Cu薄膜的影响

doi:10.11896/j.issn.1005-023X.2018.10.010

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Abstract This work aims to study the effect of gun scanning rate on atmospheric cold plasma spraying of Cu film. N₂ and NH₃ mixed gas was used as the plasma gas source. The copper nitrate solution was atomized and passed into the downstream of the plasma jet. The atomization driving gas was N₂ with a flow rate of 4 L/min, the shielding gas was Ar with a flow rate of 12 L/min. The chemical state of copper in the prepared copper film was analyzed by X-ray photoelectron spectroscopy. The microstructures of the prepared copper films were observed by scanning electron microscopy (SEM). The effects of the scanning rate on the spray gun were discussed. As the increasing scanning rate of the gun in the experimental range, the chemical state of the copper elements in the prepared film samples was changed from Cu²⁺ to Cu⁺ and then to Cu, and the grain size of the film was gradually reduced. In the spraying process, Cu(NO₃)₂ in the plasma decomposition reaction would produce intermediates, NH₃ in the plasma generated the active particles would react with the intermediate product and deposited to obtain Cu film.

Key words： atmospheric pressure scanning rate plasma copper film copper copper oxide

Published: 25 May 2018 Online: 2018-07-06

CLC number:

TQ320.7

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	Articles by authors
	HAO Jianmin
	LIU Xianghui
	CHEN Yongnan
	CHEN Hong

Cite this article:

HAO Jianmin,LIU Xianghui,CHEN Yongnan, et al. Effect of Gun Scanning Rate on Cu Films Prepared by Atmospheric Pressure Cold Plasma Spraying[J]. Materials Reports, 2018, 32(10): 1623-1627.

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https://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.10.010 OR https://www.mater-rep.com/EN/Y2018/V32/I10/1623

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