| INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
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| Negative Persistent Photoconductance Effect and Its Neuromorphic Computing Applications |
| LI Yachao1,2, HU Lingxiang2, LIU Wei2, YE Zhizhen3,4, ZHUGE Fei2,4,5,6,*
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1 School of Materials Science and Chemical Engineering, Ningbo University, Ningbo 315211, Zhejiang, China;
2 Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang, China;
3 State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
4 Institute of Wenzhou, Zhejiang University, Wenzhou 325006, Zhejiang, China;
5 Center for Excellence in Brain Science and Intelligence Technology, Chinese Academy of Sciences, Shanghai 200031, China;
6 School of Materials Science and Optoelectronic Technology, Chinese Academy of Sciences, Beijing 100029, China |
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Abstract With the rapid advancement of artificial intelligence, the traditional von Neumann architecture is encountering a bottleneck in boosting computational power, making it difficult to satisfy the need for efficient and high-speed computing required by complex algorithms such as deep learning. Neuromorphic computing has emerged as a solution to this challenge. Inspired by the human brain, it utilizes an integrated architecture for data processing and storage, offering high parallelism and extremely low power consumption. The negative persistent photoconductance (NPPC) effect refers to the phenomenon where the electrical conductance of a semiconducting material or device decreases under light illumination, with the reduced conductance persisting for a relatively long time even after the light is removed. Neuromorphic devices leveraging the NPPC effect can flexibly adjust their conductance in response to changes in light signals, thereby enhancing information sensing and processing accuracy. This capability provides significant advantages in complex interactive environments, while also reducing energy consumption and simplifying hardware architecture. These features make NPPC devices highly promising for neuromorphic computing applications. This paper first introduces the fundamental concept of photoconductance and systematically discusses the physical mechanisms underlying the NPPC effect, including charge transfer, defect trapping, charge tunneling, and polarization switching. It then details the applications of NPPC in neuromorphic computing, focusing on simulating synaptic and neuronal functions. Finally, it provides an outlook on the future opportunities and challenges faced by NPPC-based neuromorphic devices.
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Published: 25 March 2026
Online: 2026-04-03
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1 Chou M J, Tsui D C, Weimann G. Applied Physics Letters, 1985, 47(6), 609.
2 Zhu X, Gao C, Ren Y, et al. Advanced Materials, 2023, 35(24), 2301468.
3 Ahmed T, Kuriakose S, Abbas S, et al. Advanced Functional Materials, 2019, 29(39), 1901991.
4 Lai H, Zhou Y, Zhou H, et al. Advanced Materials, 2022, 34(19), 2110278.
5 Xie L, Chen X, Dong Z, et al. Advanced Electronic Materials, 2019, 5(8), 1900458.
6 Von Neumann J. IEEE Annals of the History of Computing, 1993, 15(4), 27.
7 Zidan M A, Strachan J P, Lu W D. Nature Electronics, 2018, 1(1), 22.
8 Bliss T V P, Collingridge G L. Nature, 1993, 361(6407), 31.
9 Liu C N, Michaelis M, Amir R, et al. Journal of Neurophysiology, 2000, 84(1), 205.
10 Drachman D A. Neurology, 2005, 64(12), 2004.
11 Attwell D, Laughlin S B. Journal of Cerebral Blood Flow & Metabolism, 2001, 21(10), 1133.
12 Cheng Z, Ríos C, Pernice W H P, et al. Science Advances, 2017, 3(9), e1700160.
13 Dresbach T, Qualmann B, Kessels M M, et al. Cellular and Molecular Life Sciences CMLS, 2001, 58(1), 94.
14 Boahen K. Nature, 2022, 612(7938), 43.
15 Roy K, Jaiswal A, Panda P. Nature, 2019, 575(7784), 607.
16 Shan H, Ying H, Cheng P, et al. Chinese Journal of Luminescence, 2025, 46(2), 245 (in Chinese).
单海, 应宏微, 程培红, 等. 发光学报, 2025, 46(2), 245.
17 Indiveri G, Liu S C. Proceedings of the IEEE, 2015, 103(8), 1379.
18 Indiveri G, Linares-Barranco B, Legenstein R, et al. Nanotechnology, 2013, 24(38), 384010.
19 Wang J, Zhuge F. Advanced Materials Technologies, 2019, 4(3), 1800544.
20 Wang Z, Zeng T, Ren Y, et al. Nature Communications, 2020, 11(1), 1510.
21 Wang Z, Joshi S, Savel'ev S, et al. Nature Electronics, 2018, 1(2), 137.
22 Hu L, Yang J, Wang J, et al. All-optically controlled memristor, https:∥doi. org/10. 48550/arXiv. 2004. 08077.
23 Hu L, Yang J, Wang J, et al. Advanced Functional Materials, 2021, 31(4), 2005582.
24 Yu Z, Xu J, Han X, et al. Materials Reports, 2024, 38(13), 47 (in Chinese).
余志强, 徐佳敏, 韩旭, 等. 材料导报, 2024, 38(13), 47.
25 Fuller E J, Keene S T, Melianas A, et al. Science, 2019, 364(6440), 570.
26 Ding K, Wang J, Zhou Y, et al. Science, 2019, 366(6462), 210.
27 Krzysteczko P, Münchenberger J, Schäfers M, et al. Advanced Materials, 2012, 24(6), 762.
28 Kim D, Jeon Y R, Ku B, et al. ACS Applied Materials & Interfaces, 2021, 13(44), 52743.
29 Sengupta A, Al Azim Z, Fong X, et al. Applied Physics Letters, 2015, 106(9), 93704.
30 Wang T, Ran H, Zhou G. Journal of Inorganic Materials, 2023, 38(4), 437.
31 Chen X, Lou Y, Zhao N, et al. Materials Reports, 2022, 36(10), 21 (in Chinese).
陈晓平, 楼玉民, 赵宁宁, 等. 材料导报, 2022, 36(10), 21.
32 Kang D J, Park J U, Bae B S, et al. Optics Express, 2003, 11(10), 1144.
33 Cao Z, Aharonian F A, An Q, et al. Nature, 2021, 594(7861), 33.
34 Yang Y, Peng X, Kim H S, et al. Nano Letters, 2015, 15(9), 5875.
35 Hori T, Ozono T, Orihashi N, et al. Journal of Applied Physics, 2006, 99(6), 64508.
36 Wang L, Wang H, Liu J, et al. Advanced Materials, 2024, 36(38), 2403538.
37 Maier P, Hartmann F, Rebello S D M, et al. Applied Physics Letters, 2016, 109(2), 023501.
38 Zhang Z, Wang S, Liu C, et al. Nature Nanotechnology, 2022, 17(1), 27.
39 Jin C, Wang J, Yang S, et al. Advanced Materials, 2025, 37(1), 2410398.
40 Panigrahi S, Bera A, Basak D. ACS Applied Materials & Interfaces, 2009, 1(10), 2408.
41 Ye Y, Zhao J, Xiao L, et al. ACS Applied Materials & Interfaces, 2018, 10(22), 19002.
42 Lu C, Meng J, Song J, et al. Nano Letters, 2024, 24(5), 1667.
43 Hu L, Shao J, Wang J, et al. Applied Physics Reviews, 2024, 11(1), 011411.
44 Lo I, Chen S J, Lee Y C, et al. Physical Review B, 1998, 57(12), R6819.
45 Tong T, Wang S, Zhao J, et al. Nanoscale Horizons, 2019, 4(1), 138.
46 Hong Z, Zhao J, Li S, et al. Nanoscale, 2019, 11(7), 3360.
47 Höpfel R A. Applied Physics Letters, 1988, 52(10), 801.
48 Davidenko N A, Davidenko I I, Derevyanko N A, et al. High Energy Chemistry, 2011, 45(3), 240.
49 Sirunyan A M, Tumasyan A, Adam W, et al. Physical Review D, 2019, 99(11), 112003.
50 Kumar A, Intonti K, Viscardi L, et al. Materials Horizons, 2024, 11(10), 2397.
51 Qin J X, Yang X G, Lv C F, et al. Journal of Physical Chemistry Letters, 2021, 12(16), 4079.
52 Hong Z, Zhao J, Huang K, et al. Journal of Materials Chemistry C, 2019, 7(14), 4259.
53 Jiang J, Xu W, Sun Z, et al. Small, 2024, 20(13), 2306068.
54 Yang J, Hu L, Shen L, et al. Fundamental Research, 2024, 4(1), 158.
55 Miao J, Song B, Li Q, et al. ACS Nano, 2017, 11(6), 6048.
56 Biswas C, Güneş F, Loc D D, et al. Nano Letters, 2011, 11(11), 4682.
57 Lui C H, Frenzel A J, Pilon D V, et al. Physical Review Letters, 2014, 113(16), 166801.
58 Baek E, Rim T, Schütt J, et al. Nano Letters, 2017, 17(11), 6727.
59 Wang Y, Liu E, Gao A, et al. ACS Nano, 2018, 12(9), 9513.
60 Chen Y, Zhang M, Li D, et al. ACS Nano, 2023, 17(13), 12499.
61 Yang C, Sun B, Zhou G, et al. ACS Materials Letters, 2023, 5(2), 504.
62 Wu X, Dang B, Wang H, et al. Advanced Intelligent Systems, 2022, 4(3), 2100151.
63 Wang C, Yang Z, Wang S, et al. Advanced Intelligent Systems, 2020, 2(1), 1900103.
64 Wang Y, Gong Y, Huang S, et al. Nature Communications, 2021, 12(1), 5979.
65 Hamdioui S, Xie L, Nguyen H A D, et al. In: Design, Automation and Test in Europe Conference and Exhibition. Grenoble, 2015, pp. 1718.
66 Park S O, Jeong H, Park J, et al. Nature Communications, 2022, 13(1), 2888.
67 Liu Z, Tang J, Gao B, et al. Nature Communications, 2020, 11(1), 4234.
68 Ziegler M, Riggert C, Hansen M, et al. IEEE Transactions on Biomedical Circuits and Systems, 2015, 9(2), 197.
69 Bi G, Poo M. Journal of Neuroscience, 1998, 18(24), 10464.
70 Caporale N, Dan Y. Annual Review of Neuroscience, 2008, 31(1), 25.
71 Hu L, Zhuge X, Wang J, et al. Advanced Electronic Materials, 2025, 11(3), 2400482.
72 Jo S H, Chang T, Ebong I, et al. Nano Letters, 2010, 10(4), 1297.
73 Prezioso M, Merrikh-Bayat F, Hoskins B D, et al. Nature, 2015, 521(7550), 61.
74 Agnus G, Zhao W, Derycke V, et al. Advanced Materials, 2010, 22(6), 702.
75 Liu K, Zhang Q, Liao Y, et al. Chinese Journal of Luminescence, 2024, 45(2), 317 (in Chinese).
刘凯, 张晴怡, 廖延安, 等. 发光学报, 2024, 45(2), 317.
76 Mead C. Proceedings of the IEEE, 1990, 78(10), 1629.
77 Merolla P A, Arthur J V, Alvarez-Icaza R, et al. Science, 2014, 345(6197), 668.
78 Pei J, Deng L, Song S, et al. Nature, 2019, 572(7767), 106.
79 Shan X, Zhao C, Wang X, et al. Advanced Science, 2022, 9(6), 2104632.
80 Gu L, Li Y, Xie D, et al. IEEE Transactions on Electron Devices, 2022, 69(8), 4382.
81 Gao Z, Jiang R, Deng M, et al. Advanced Materials, 2024, 36(29), 2401585.
82 Zheng J, Du Y, Dong Y, et al. Applied Physics Letters, 2024, 124(13), 133502.
83 Li D, Ren H, Chen Y, et al. Advanced Functional Materials, 2023, 33(42), 2303198.
84 Jiang J, Shan X, Xu J, et al. Advanced Functional Materials, 2024, 34(51), 2409677.
85 Zhang Y, Guo Q, Duan Y, et al. Advanced Functional Materials, 2024, 34(13), 2310001.
86 Zhou G, Li J, Song Q, et al. Nature Communications, 2023, 14(1), 8489.
87 Xiao Y, Li W, Lin X, et al. Advanced Electronic Materials, 2023, 9(10), 2300388.
88 Xie T, Leng Y, Sun T, et al. Advanced Functional Materials, 2025, 35(7), 2415457.
89 Farrant M, Nusser Z. Nature Reviews Neuroscience, 2005, 6(3), 215.
90 Markram H, Toledo-Rodriguez M, Wang Y, et al. Nature Reviews Neuroscience, 2004, 5(10), 793.
91 Izhikevich E M. IEEE Transactions on Neural Networks, 2004, 15(5), 1063.
92 Hodgkin A L, Huxley A F. Journal of Physiology, 1952, 116(4), 473.
93 Hodgkin A L, Huxley A F. Journal of Physiology, 1952, 116(4), 449.
94 Wan C, He Y, Jiang S, et al. ACS Applied Electronic Materials, 2020, 2(2), 389.
95 Ma Q, Haider M R, Shrestha V L, et al. Analog Integrated Circuits and Signal Processing, 2012, 73(1), 329.
96 Kwon M W, Baek M H, Hwang S, et al. Journal of Applied Physics, 2018, 124(15), 152107.
97 Chatterjee D, Kottantharayil A. IEEE Electron Device Letters, 2019, 40(8), 1301.
98 Laughlin S B, De Ruyter Van Steveninck R R, Anderson J C. Nature Neuroscience, 1998, 1(1), 36.
99 Pulido C, Ryan T A. Science Advances, 2021, 7(49), 9.
100 Li Z, Hu L, Wang J, et al. Journal of Inorganic Materials, 2024, 39(4), 345 (in Chinese).
李宗晓, 胡令祥, 王敬蕊, 等. 无机材料学报, 2024, 39(4), 345.
101 Li Z, Geng X, Wang J, et al. Frontiers in Neuroscience, 2021, 15(7179), 717947.
102 Hu L, Li Z, Shao J, et al. Nano Letters, 2024, 24(35), 10865.
103 Huang Y, Tan Y, Kang Y, et al. Advanced Functional Materials, 2024, 34(38), 2402677.
104 Wang C Y, Liang S J, Wang S, et al. Science Advances, 2020, 6(26), 6173.
105 Kumar K, Sharma P, Verma S, et al. Advanced Functional Materials, 2024, 34(40), 2405364.
106 Zhang H, Yao J, Shao J, et al. Scientific Reports, 2014, 4(1), 5876.
107 Yan J, Ying J, Yan M, et al. Advanced Functional Materials, 2021, 31(40), 2103982.
108 Cao A, Li S, Chen H, et al. Materials Horizons, 2023, 10(11), 5099.
109 Wang M, Ouyang D, Dai Y, et al. Advanced Materials, DOI:10. 1002/adma. 202500049.
110 Liu K, Zhang T, Dang B, et al. Nature Electronics, 2022, 5(11), 761.
111 Huang B, Lan L, Pan J, et al. Small Science, DOI:10. 1002/smsc. 202400511.
112 Fang H, Ma S, Wang J, et al. Advanced Functional Materials, 2024, 34(49), 2409045.
113 Tian Q, Xun K, Li Z, et al. Journal of Semiconductors, 2025, 46(2), 22407.
114 Yao J, Wang Q, Zhang Y, et al. Nature Communications, 2024, 15(1), 6147.
115 Liu Z, Wang Y, Zhang Y, et al. Advanced Materials, 2025, 37(4), 2410783. |
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