金红石TiO<sub>2</sub>纳米线忆阻器的制备及阻变存储机制

doi:10.11896/cldb.23020160

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Abstract In this work, the one-dimensional ordered rutile TiO₂ nanowire arrays were fabricated by a facile hydrothermal process. The rutile TiO₂ nanowire memory device with the Au/TiO₂/FTO structure has been prepared. The resistive switching mechanism of the Au/TiO₂/FTO device has been studied systematically and the nonlinear resistive switching model modified by oxygen vacancies has been developed. The Au/TiO₂/FTO device indicates a nonvolatile bipolar resistive switching characteristic. A high resistance ratio in excess of two orders of magnitude was obtained in the TiO₂ nanowire-based Au/TiO₂/FTO device. Furthermore, the resistive switching behaviors of the TiO₂ nanowire memory device are modulated by the trap regulated SCLC mechanism in the high resistance state and the Ohmic conduction mechanism in the low resistance state, respectively. In addition, the nonlinear ion-drift model adjusted by oxygen vacancies has been proposed, which has been suggested to be responsible for the nonvolatile resistive switching behavior of the Au/TiO₂/FTO device. This work demonstrates that the Au/TiO₂/FTO device may be a potential candidate for future nonvolatile memory applications.

Key words： TiO₂ nanowire memristor nonvolatile oxygen vacancies

Published: 10 July 2024 Online: 2024-08-01

CLC number:

TQ125

Fund:National Natural Science Foundation of China (61805053), the Guangxi Science and Technology Project (AD19110038), the Scientific Research Foundation of Guangxi University of Science and Technology (19Z07) and the Innovation Project of Guangxi Graduate Education (YCSW2021135).

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	Articles by authors
	YU Zhiqiang
	XU Jiamin
	HAN Xu
	CHEN Cheng
	QU Xinru
	TANG Jin
	SUN Zijun
	XU Zhimou

Cite this article:

YU Zhiqiang,XU Jiamin,HAN Xu, et al. Preparation and Resistive Switching Mechanism of Rutile TiO₂ Nanowire Memristor[J]. Materials Reports, 2024, 38(13): 23020160-7.

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http://www.mater-rep.com/EN/10.11896/cldb.23020160 OR http://www.mater-rep.com/EN/Y2024/V38/I13/23020160

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