缓冲层Ta对退火Co/Cu/Co薄膜微观结构和界面互扩散的影响

doi:10.11896/j.issn.1005-023X.2018.22.016

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Abstract Co/Cu/Co film and Ta/Co/Cu/Co film with buffer layer was prepared on Si/SiO₂ substrate by DC magnetron sputtering method. The microstructure, surface morphology, texture and interlayer interdiffusion phenomenon of the film were investigated by scanning electron microscope, atomic force microscope, X-ray diffraction and Auger electron energy spectrum. The experimental results indicated that {111} and {002} diffracation peaks were observed during annealing in both kinds of the Co/Cu/Co film. Stronger {111} diffracation peaks and {111} fibre texture exited in Ta/Co/Cu/Co multilayers than SiO₂/Co/Cu/Co multilayers. Addition of Ta buffer decreased the hole density and the roughness of the film. Furthermore, interdiffusion of Co and Cu occured at the interface, as a result the film lamellar structure was destroyed. The addition of Ta buffer increased the wettability between Co/Cu/Co film and substrate, led to an improvement of microstructure and decreased the interface interdiffusion.

Key words： giant magnetoresistance (GMR) multilayers Ta buffer annealing texture interdiffusion

Published: 21 December 2018

CLC number:

TB383

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	PENG Xiaowen
	CHEN Leng

Cite this article:

PENG Xiaowen,CHEN Leng. Effect of Ta Buffer on Microstructure and Interdiffusion of Annealed Co/Cu/Co Film[J]. Materials Reports, 2018, 32(22): 3931-3935.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.22.016 OR http://www.mater-rep.com/EN/Y2018/V32/I22/3931

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