二氧化钒薄膜材料相变临界场强调控方法研究

doi:10.11896/j.issn.1005-023X.2018.06.004

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Abstract The vanadium dioxide and other valence vanadium oxides were grown on Al₂O₃ ceramic substrate by the inorganic sol-gel method and vacuum annealing process. The effects of annealing time on the equivalent composition and content of VO₂, V₂O₅, V₆O₁₃ and V₆O₁₁ were studied, and the critical temperature of metal-insulator transition (MIT) and the electric field (E) MIT of the vanadium dioxide thin film were both studied. In the experiment, when the annealing time was 10 h, 8 h and 6 h, the E_MIT was 1.8 MV/m, 0.8 MV/m and 0.4 MV/m, and the E_MIT decreased over 75%, from 6 h to 10 h. At the same time, the resis-tance change multiple of metal-insulator transition of the thin film decreased with the decrease of the E_MIT, but the critical temperature of MIT did not change significantly. In this paper, it was shown that the effective control of the E_MIT could be achieved by controlling the vacuum annealing time, and the method could be used to develop thin film materials with different E_MIT to meet the protection requirements of different electromagnetic environments.

Key words： inorganic sol-gel method vanadium dioxide thin film vacuum annealing critical field intensity

Published: 25 March 2018 Online: 2018-03-25

CLC number:

O484.4

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	Articles by authors
	SHAN Shihao
	WANG Qingguo
	QU Zhaoming
	CHENG Wei
	LI Ang

Cite this article:

SHAN Shihao,WANG Qingguo,QU Zhaoming, et al. Critical Field Intensity Control for Metal-insulator Transition of Vanadium Dioxide Thin Film: a Methodological Study[J]. Materials Reports, 2018, 32(6): 870-873.

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https://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.06.004 OR https://www.mater-rep.com/EN/Y2018/V32/I6/870

1 Wilhelmi K A, Waltersson K, Kihlborg L, et al. A refinement of the crystal structure of V₆O₁₃[J].Acta Chemica Scandinavica, 2001,25(3):2675.
2 Schwingenschloegl U, Eyert V, Eckern U. From VO₂ to V₂O₃:The metal-insulator transition of the magneli phase V₆O₁₁[J].Europhysical Letters,2002,61(3):361.
3 Moon R M. Antiferromagnetism in V₂O₃[J].Physical Review Letters,1970,25(8):527.
4 Morin F J. Oxides which show a metal-to-insulator transition at the Neel temperature[J].Physical Review Letters,1959,3(1):34.
5 Xiong Y, Wen Q Y, Tian W, et al. Researches on the electrical properties of vanadium oxide thin films on Si substrates[J].Physics,2015,64(1):17102(in Chinese).
熊瑛,文岐业,田伟,等.硅基二氧化钒相变薄膜电学特性研究[J].物理学报,2015,64(1):17102.
6 Ruzmetov D, Zawilski K T, Narayanamurti V, et al. Structure-functional property relationships in rf-sputtered vanadium dioxide thin films[J].Journal of Applied Physics,2007,102(11):113715.
7 Huang Zhangli, Chen Sihai,Lu Chaohong,et al.Infrared characteristices of VO₂ thin film for smart window and laser protection applications[J].Applied Physics Letters,2012,101(19):191905.
8 Stefanovich G, Pergament A, Stefanovich D. Electrical switching and Mott transition in VO₂[J].Journal of Physics Condensed Matter,2000,12(41):8837.
9 Qiu D H, Wen Q Y, Yang Q H, et al. Growth of vanadium dioxide thin films on Pt metal film and the electrically-driven metal-insulator transition charact-eristics of them[J].Acta Physica Sinica Chinese Edition,2013,62(21):217201.
10 Wen Q Y, Zhang H W, Yang Q H, et al. Terahertz metamaterials with VO₂ cut-wires for thermal tunability[J].Applied Physics Letters,2010,97(2):021111.
11 Zhou Y, Chen X, Ko C, et al. Voltage-triggered ultrafast phase transition in vanadium dioxide switches[J].IEEE Electron Device Letters,2013,34(2):220.
12 Bao Jianhua. Preparation, structure and optical properties of vana-dium oxide films by sol-gel[D].Wuhan:Wuhan University of Tech-nology,2012(in Chinese).
包箭华. 氧化钒薄膜的溶胶凝胶制备、结构与光学性能[D].武汉:武汉理工大学,2012.
13 Liu Y, Zhang D, Jing L I, et al. Preparation and electrochemical performances of the V₆O₁₃/VO₂ for Mg rechargeable battery as cathode material[J]. Journal of Functional Materials, 2015,46(21):21089(in Chinese).
刘渝萍,张丁非,李晶,等.镁可充电池正极材料V₆O₁₃/VO₂的制备与电化学性能研究[J].功能材料,2015,46(21):21089.
14 Wang C X,Tang Z X,Chang W Z,et al. Experimental study on development characteristics of point discharge in GIS[J].Power System Technology,2011,35(11):157(in Chinese).
王彩雄,唐志国,常文治,等.气体绝缘组合电器尖端放电发展过程的试验研究[J].电网技术,2011,35(11):157.
15 Zhang Guanjun. Initiating mechanism and developing process of surface flashover along solid insulating materials in vacuum[D].Xi’an:Xi’an Jiao Tong University,2001(in Chinese).
张冠军. 真空中固体绝缘材料沿面闪络的起始机理与发展过程[D].西安:西安交通大学,2001.