非晶态工程调控Bi掺杂SrTiO<sub>3</sub>薄膜的储能性能

doi:10.11896/cldb.25060127

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Abstract Low temperature amorphous films with excellent energy storage properties play an important role in silicon-based microelectronic applications. In this work, Sr_(1-1.5x)Bi_xTiO₃(SBTx, x=0, 0.05, 0.1, 0.15) films were prepared on Pt/Ti/SiO₂/Si substrates by sol-gel method and spin coating method. The control mechanism of bismuth content and annealing temperature on their energy storage properties was studied. XRD results show that the amorphous thin films are successfully prepared, and it is found that the Bi content can reduce the crystallization temperature of the thin films. When the annealing temperature is 500 ℃, the SBT0.05 thin films reach the critical amorphous state. At this time, the thin films have large dielectric constant and low dielectric loss and leakage current. Under the electric field of 4 100 kV/cm, the recoverable energy storage density of 20.79 J/cm³ and the energy storage efficiency of 80.13% are obtained, which is expected to provide a reference for the research of low-temperature prepared energy storage materials.

Key words： bismuth strontium titanate (SBT) amorphous film energy storage

Published: 10 July 2026 Online: 2026-07-24

CLC number:

TQ174.1

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	PENG Jinlin
	ZHOU Li
	GONG Yueqiu

Cite this article:

PENG Jinlin,ZHOU Li,GONG Yueqiu. Control of Energy Storage Properties of Bi Doped SrTiO₃ Thin Films by Amorphous Engineering[J]. Materials Reports, 2026, 40(13): 25060127-6.

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https://www.mater-rep.com/EN/10.11896/cldb.25060127 OR https://www.mater-rep.com/EN/Y2026/V40/I13/25060127

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