大尺寸直拉法单晶硅生长过程中晶体缺陷的研究进展

doi:10.11896/cldb.23100030

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Abstract Thecarbon emissions of solar photovoltaic power generation account for only 1/20 to 1/10 of traditional fossil energy power generation, which is an inevitable choice and effective way to achieve the carbon peaking and carbon neutrality goals. With the continuous increase of photovoltaic installed capacity and the continuous improvement of solar cell efficiency, photovoltaic and other related industries have put forward higher requirements for the development of monocrystalline silicon wafers towards low cost, large size and high quality. However, the uneven heat and mass transfer and crystal defects caused by the large size of silicon wafers are important factors affecting the electrical properties of silicon wafers. This paper inducts the types and growth mechanism of defects in the growth process of Czochralski single crystal silicon, and summarizes the research status of the formation and influence of nitrogen, phosphorus, boron and carbon doping elements on defects. The interaction of interstitial atoms, vacancies and lattice stress in silicon is studied, and the development direction of crystal defect control technology in the growth process of large-size Czochralski single crystal silicon is prospected.

Key words： monocrystalline silicon point defects oxygen precipitation nitrogen phosphorus boron carbon

Published: 25 December 2024 Online: 2024-12-20

CLC number:	O77+1
	O77+5
	O77+9

Fund:Key Research and Development Project of Yunnan Province (202002AB080030, 202103AA080003), the Major Science and Technology Projects in Yunnan Province (202102AB080016, 202202AG050012), and Yunnan Province Science and Technology Plan Project(202302AD080008).

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	Articles by authors
	ZHOU Xiang
	LI Tai
	HUANG Zhenling
	ZHAO Liang
	KANG Jiaming
	LI Shaoyuan
	RENG Yongsheng
	MA Wenhui
	LYU Guoqiang

Cite this article:

ZHOU Xiang,LI Tai,HUANG Zhenling, et al. Research Progress of Crystal Defects During the Growth of Large Size Czochralski Monocrystalline Silicon[J]. Materials Reports, 2024, 38(24): 23100030-9.

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http://www.mater-rep.com/EN/10.11896/cldb.23100030 OR http://www.mater-rep.com/EN/Y2024/V38/I24/23100030

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