柔性氧化物薄膜晶体管栅绝缘层的研究进展

doi:10.11896/cldb.23050204

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Abstract Flexible oxide thin-film transistors (TFTs) are widely used in lots of fields such as flexible organic light-emitting diode (OLED) displays, flexible sensors and bionic synapses, and so on, for its advantages of high mobility, large on/off current ratio, good device uniformity, good flexibility, light and thin. The gate dielectric layer is crucial for flexible oxide TFTs. It not only affects the basic electrical performance of the device, but also has a significant impact on the electrical stability under bias or light stress. Therefore, the raw and preparation process of gate dielectric layer is the key to achieving high-performance flexible oxide TFTs. In this work, the research progress of gate dielectric layer for flexible oxide TFTs was reviewed. Firstly, several typical film preparation techniques were introduced. Then, gate dielectric materials for flexible oxide TFTs were described in detail, including inorganic high dielectric constant (high-K) dielectric materials such as zirconium oxide (ZrO₂), hafnium oxide (HfO₂) and aluminum oxide (Al₂O₃), organic dielectric materials such as polyvinyl pyrrolidone (PVP), polymethyl methacrylate (PMMA) and polyvinyl alcohol (PVA), and double electric layer electrolyte dielectric materials. The advantages and disadvantages of these dielectric materials were discussed. Finally, it summarized the technical characteristics and applications of gate dielectric layer for flexible oxide TFTs and prospected the future development and research of gate dielectric layer technologies.

Key words： flexible thin-film transistor gate dielectric layer high dielectric constant

Published: 10 December 2024 Online: 2024-12-10

CLC number:

O484.5

Fund:Guangdong Science and Technology Plan (2022A0505020022), Research Fund of Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology (2020B1212030010), and National Natural Science Foundation of China (61804029).

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	Articles by authors
	TAN Haixing
	LIN Jianrong
	HUANG Peiyuan
	PENG Jingyi
	LIU Si
	CHEN Jianwen
	XU Hua
	XIAO Peng

Cite this article:

TAN Haixing,LIN Jianrong,HUANG Peiyuan, et al. Research Progress of Gate Dielectric Layer for Flexible Oxide Thin-Film Transistors[J]. Materials Reports, 2024, 38(23): 23050204-9.

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http://www.mater-rep.com/EN/10.11896/cldb.23050204 OR http://www.mater-rep.com/EN/Y2024/V38/I23/23050204

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