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| Research Progress of Flexible Resistive Switching Materials and Devices |
| LU Ying1,2,3,CHEN Weilin1,2,3,GAO Shuang1,3,,LI Runwei1,2,3,4,
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1 CAS Key Laboratory of Magnetic Materials and Devices,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China
2 College of Materials Sciences and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China
3 Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China
4 School of Future Technology,University of Chinese Academy of Sciences,Beijing 100049,China |
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Abstract With the rapid development of Internet of things technology, there is an urgent need for flexible and wearable electronic equipments. As an indispensable part of electronic equipments, memory is bound to develop towards flexibility. With the merits of high speed, low-power consumption, intrinsic nonvolatility, simple structure and wide selection of materials, resistive switching memory has been considered as one of the most promising candidates for future flexible memory devices.
Certainly,the occurrence of cracks in thin films will lead to device failure. This urges intensive research endeavors to seek appropriate materials and optimize device fabrication process, aiming at improving the flexibility of resistive switching memory devices.
A great many of dielectric materials have been explored as the storage media of flexible resistive switching memory devices, ranging from normal inorganic and organic materials to novel organic-inorganic composite or hybrid ones. Meanwhile, a lot of conducting or semiconducting mate-rials have been employed as electrodes, including metals, metal alloys, carbon/silicon materials, nitrides, conductive oxides, etc. As for flexible substrates, common choices are polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET) and polydimethylsiloxane (PDMS), etc. On the other hand, due to the need of high vacuum and even high temperature, the routine all-vapor method to fabricate thin film devices is normally unsuited for flexible resistive switching memory devices. To solve this issue, vapor-solution hybrid methods and even all-solution ones have recently been introduced into this field, realizing preliminary the easy, fast and low-temperature fabrication of flexible resistive switching memory devices.
In this article, the latest research progress of flexible resistive switching memory is comprehensively reviewed, with a particular emphasis on the selection of materials (including storage media as well as electrode and substrate materials), fabrication technologies and device performance. The failure mechanism of flexible resistive switching memory is also included. Finally, the current challenges and future prospects in this field are briefly discussed.
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Published: 15 January 2020
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| Fund:This work was supported by the National Key R&D Program of China (2017YFB0405604), National Natural Science Foundation of China (61704178, 61774161, 61974179, 51525103, 51931011, 61841404), and Ningbo Natural Science Foundation (2018A610020). |
About author:: Ying Lu received her B.E. degree in metal material engineering from Jiangxi University of Science and Technology in 2016. She is currently pursuing her Ph.D. at the Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS) under the supervision of Prof. Runwei Li. Her research is focused on flexible/elastic resistive switching materials and devices.
Shuang Gao received the B.S. degree from University of Science and Technology Beijing (USTB) in 2011 and then the Ph.D. degree from Tsinghua University in 2016. After a two-year postdoctoral research at the Ningbo Institute of Materials Technology and Enginee-ring (NIMTE), Chinese Academy of Sciences (CAS), he is currently an associate professor therein. His current research interests are mainly resistive switching materials and devices for wearable electronics and novel logic-in-memory as well as neuromorphic computing applications.
Run-wei Li received the Ph.D. degree from the Institute of Physics, Chinese Academy of Sciences (CAS) in July 2002 and then worked as a JSPS research fellow at the Osaka University. In September 2003, he joined to the Kaiserslautern University as an Alexander von Humboldt research fellow. After that, he joined to the National Institute for Materials Science in February 2005 and worked as a senior research follow. He has been a “One Hundred Talents” professor of CAS since March 2008, and now is a full professor at the Ningbo Institute of Materials Techno-logy and Engineering (NIMTE), CAS and the director of CAS Key Laboratory of Magnetic Materials and Devices. His current research work is mainly focused on the functional materials and devices for new types of storage and sensors. |
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2020, Vol. 34 
