Abstract: The vanadium dioxide and other valence vanadium oxides were grown on Al2O3 ceramic substrate by the inorganic sol-gel method and vacuum annealing process. The effects of annealing time on the equivalent composition and content of VO2, V2O5, V6O13 and V6O11 were studied, and the critical temperature of metal-insulator transition (MIT) and the electric field (E) MIT of the vanadium dioxide thin film were both studied. In the experiment, when the annealing time was 10 h, 8 h and 6 h, the EMIT was 1.8 MV/m, 0.8 MV/m and 0.4 MV/m, and the EMIT decreased over 75%, from 6 h to 10 h. At the same time, the resis-tance change multiple of metal-insulator transition of the thin film decreased with the decrease of the EMIT, but the critical temperature of MIT did not change significantly. In this paper, it was shown that the effective control of the EMIT could be achieved by controlling the vacuum annealing time, and the method could be used to develop thin film materials with different EMIT to meet the protection requirements of different electromagnetic environments.
山世浩, 王庆国, 曲兆明, 成伟, 李昂. 二氧化钒薄膜材料相变临界场强调控方法研究[J]. 材料导报, 2018, 32(6): 870-873.
SHAN Shihao, WANG Qingguo, QU Zhaoming, CHENG Wei, LI Ang. Critical Field Intensity Control for Metal-insulator Transition of Vanadium Dioxide Thin Film: a Methodological Study. Materials Reports, 2018, 32(6): 870-873.
1 Wilhelmi K A, Waltersson K, Kihlborg L, et al. A refinement of the crystal structure of V6O13[J].Acta Chemica Scandinavica, 2001,25(3):2675. 2 Schwingenschloegl U, Eyert V, Eckern U. From VO2 to V2O3:The metal-insulator transition of the magneli phase V6O11[J].Europhysical Letters,2002,61(3):361. 3 Moon R M. Antiferromagnetism in V2O3[J].Physical Review Letters,1970,25(8):527. 4 Morin F J. Oxides which show a metal-to-insulator transition at the Neel temperature[J].Physical Review Letters,1959,3(1):34. 5 Xiong Y, Wen Q Y, Tian W, et al. Researches on the electrical properties of vanadium oxide thin films on Si substrates[J].Physics,2015,64(1):17102(in Chinese). 熊瑛,文岐业,田伟,等.硅基二氧化钒相变薄膜电学特性研究[J].物理学报,2015,64(1):17102. 6 Ruzmetov D, Zawilski K T, Narayanamurti V, et al. Structure-functional property relationships in rf-sputtered vanadium dioxide thin films[J].Journal of Applied Physics,2007,102(11):113715. 7 Huang Zhangli, Chen Sihai,Lu Chaohong,et al.Infrared characteristices of VO2 thin film for smart window and laser protection applications[J].Applied Physics Letters,2012,101(19):191905. 8 Stefanovich G, Pergament A, Stefanovich D. Electrical switching and Mott transition in VO2[J].Journal of Physics Condensed Matter,2000,12(41):8837. 9 Qiu D H, Wen Q Y, Yang Q H, et al. Growth of vanadium dioxide thin films on Pt metal film and the electrically-driven metal-insulator transition charact-eristics of them[J].Acta Physica Sinica Chinese Edition,2013,62(21):217201. 10 Wen Q Y, Zhang H W, Yang Q H, et al. Terahertz metamaterials with VO2 cut-wires for thermal tunability[J].Applied Physics Letters,2010,97(2):021111. 11 Zhou Y, Chen X, Ko C, et al. Voltage-triggered ultrafast phase transition in vanadium dioxide switches[J].IEEE Electron Device Letters,2013,34(2):220. 12 Bao Jianhua. Preparation, structure and optical properties of vana-dium oxide films by sol-gel[D].Wuhan:Wuhan University of Tech-nology,2012(in Chinese). 包箭华. 氧化钒薄膜的溶胶凝胶制备、结构与光学性能[D].武汉:武汉理工大学,2012. 13 Liu Y, Zhang D, Jing L I, et al. Preparation and electrochemical performances of the V6O13/VO2 for Mg rechargeable battery as cathode material[J]. Journal of Functional Materials, 2015,46(21):21089(in Chinese). 刘渝萍,张丁非,李晶,等.镁可充电池正极材料V6O13/VO2的制备与电化学性能研究[J].功能材料,2015,46(21):21089. 14 Wang C X,Tang Z X,Chang W Z,et al. Experimental study on development characteristics of point discharge in GIS[J].Power System Technology,2011,35(11):157(in Chinese). 王彩雄,唐志国,常文治,等.气体绝缘组合电器尖端放电发展过程的试验研究[J].电网技术,2011,35(11):157. 15 Zhang Guanjun. Initiating mechanism and developing process of surface flashover along solid insulating materials in vacuum[D].Xi’an:Xi’an Jiao Tong University,2001(in Chinese). 张冠军. 真空中固体绝缘材料沿面闪络的起始机理与发展过程[D].西安:西安交通大学,2001.
渝公网安备50019002502923号 版权所有：《材料导报》编辑部
2018, Vol. 32 
