喷枪扫描速率对常压冷等离子喷涂Cu薄膜的影响

doi:10.11896/j.issn.1005-023X.2018.10.010

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Abstract This work aims to study the effect of gun scanning rate on atmospheric cold plasma spraying of Cu film. N₂ and NH₃ mixed gas was used as the plasma gas source. The copper nitrate solution was atomized and passed into the downstream of the plasma jet. The atomization driving gas was N₂ with a flow rate of 4 L/min, the shielding gas was Ar with a flow rate of 12 L/min. The chemical state of copper in the prepared copper film was analyzed by X-ray photoelectron spectroscopy. The microstructures of the prepared copper films were observed by scanning electron microscopy (SEM). The effects of the scanning rate on the spray gun were discussed. As the increasing scanning rate of the gun in the experimental range, the chemical state of the copper elements in the prepared film samples was changed from Cu²⁺ to Cu⁺ and then to Cu, and the grain size of the film was gradually reduced. In the spraying process, Cu(NO₃)₂ in the plasma decomposition reaction would produce intermediates, NH₃ in the plasma generated the active particles would react with the intermediate product and deposited to obtain Cu film.

Key words： atmospheric pressure scanning rate plasma copper film copper copper oxide

Published: 06 July 2018

CLC number:

TQ320.7

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	Articles by authors
	HAO Jianmin
	LIU Xianghui
	CHEN Yongnan
	CHEN Hong

Cite this article:

HAO Jianmin,LIU Xianghui,CHEN Yongnan, et al. Effect of Gun Scanning Rate on Cu Films Prepared by Atmospheric Pressure Cold Plasma Spraying[J]. Materials Reports, 2018, 32(10): 1623-1627.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.10.010 OR http://www.mater-rep.com/EN/Y2018/V32/I10/1623

1 Donegan M, Milosavljevic V, Dowling D P. Activation of PET using an RF atmospheric plasma system[J]. Plasma Chemistry & Plasma Processing,2013,33(5):941.
2 Moritzer E, Budde C, Leister C. Effect of atmospheric pressure plasma pre-treatment and aging conditions on the surface of thermoplastics[J]. Welding in the World Le Soudage Dans Le Monde,2014,59(1):23.
3 Homma T, Furuta M, Takemura Y. Inactivation of escherichia coli using the atmospheric pressure plasma jet of Ar gas[J]. Japanese Journal of Applied Physics,2013,52(3):6201.
4 Colagar A H, Memariani H, Sohbatzadeh F, et al. Nonthermal atmospheric argon plasma jet effects on escherichia coli, biomacromo-lecules[J]. Applied Biochemistry & Biotechnology,2013,171(7):1617.
5 Hsu C M, Lien S T, Yang Y J, et al. Deposition of transparent and conductive ZnO films by an atmospheric pressure plasma-jet-assisted process[J]. Thin Solid Films,2014,570:423.
6 Liu W J, Wang R C. Novel low temperature atmospheric pressure plasma jet systems for silicon dioxide and poly-ethylene thin film de-position[J]. Surface & Coatings Technology,2011,206(5):925.
7 Hsu Y W, Li H C, Yang Y J, et al. Deposition of zinc oxide thin films by an atmospheric pressure plasma jet[J]. Thin Solid Films,2011,519(10):3095.
8 Barnat E V, Nagakura D, Wang P I, et al. Real time resistivity measurements during sputter deposition of ultrathin copper films[J]. Journal of Applied Physics,2002,91(3):1667.
9 Cho N I, Nam H G, Choi Y, et al. Chemical vapor deposition of copper thin films for multi-level interconnections[J]. Microelectronic Engineering,2003,66(1-4):415.
10 Kremmer K, Yezerska O, Schreiber G, et al. Interplay between the deposition mode and microstructure in electrochemically deposited Cu thin films[J]. Thin Solid Films,2007,515(17):6698.
11 Liao Y C, Kao Z K. Direct writing patterns for electroless plated copper thin film on plastic substrates[J]. ACS Applied Materials & Interfaces,2012,4(10):5109.
12 Liu X, Jiang Z, Guo Y, et al. Fabrication of super-hydrophobic nano-sized copper films by electroless plating[J].Thin Solid Films,2010,518(14):3731.
13 Zheng X, Chen G, Zhang Z, et al. A two-step process for surface modification of poly(ethylene terephthalate) fabrics by Ar/O₂, plasma-induced facile polymerization at ambient conditions[J]. Surface & Coatings Technology,2013,226(8):123.
14 Homola T, Matouek J, Medvecká V, et al. Atmospheric pressure diffuse plasma in ambient air for ITO surface cleaning[J]. Applied Surface Science,2012,258(18):7135.
15 Jin H J, Shiratani M, Kawasaki T, et al. Plasma-enhanced metal organic chemical vapor deposition of high purity copper thin films using plasma reactor with the H atom source[J]. Journal of Vacuum Science & Technology A Vacuum Surfaces & Films,1999,17(3):726.
16 Hodgkinson J L, Massey D, Sheel D W. The deposition of copper-based thin films via atmospheric pressure plasma-enhanced CVD[J]. Surface & Coatings Technology,2013,230(10):260.
17 Zhao P, Zheng W, Watanabe J, et al. Highly conductive Cu thin film deposition on polyimide by RF-driven atmospheric pressure plasma jets under nitrogen atmosphere[J]. Plasma Processes & Polymers,2015,12(5):431.
18 Urabe K, Hiraoka Y, Sakai O. Hydrazine generation for the reduction process using small-scale plasmas in an argon/ammonia mixed gas flow[J]. Plasma Sources Science & Technology,2013,22(22):032003.
19 Eckardt T, Malléner W, Stver D. Reactive plasma spraying of silicon in controlled nitrogen atmosphere, in thermal spray industrial applications[J]. Journal of Antimicrobial Chemotherapy,1994,41(3):417.
20 Hernandez J, Wrschka P, Oehrlein G S. Surface chemistry studies of copper chemical mechanical planarization[J]. Journal of the Electrochemical Society,2001,148(7):G389.
21 Feng Y, Tan K L, Hsieh A K, et al. Corrosion mechanisms and products of copper in aqueous solutions at various pH values[J]. Corrosion -Houston Tx-,1997,53(5):389.
22 Njeh A, Wieder T, Fuess H. Reflectometry studies of the oxidation kinetics of thin copper films[J]. Surface & Interface Analysis,2010,33(7):626.
23 Gao W, Gong H, He J, et al. Oxidation behaviour of Cu thin films on Si wafer at 175—400 ℃[J]. Materials Letters,2001,51(1):78.
24 Nagai H, Hiramatsu M, Hori M, et al. Etching organic low dielectric film in ultrahigh frequency plasma using N₂/H₂ and N₂/NH₃ gases[J]. Journal of Applied Physics,2003,94(3):1362.
25 Kusano Y, Leipold F, Fateev A, et al. Production of ammonia-derived radicals in a dielectric barrier discharge and their injection for denitrification[J]. Surface & Coatings Technology,2005,200(1-4):846.
26 Park J, Giles N D, Moore J, et al. A comprehensive kinetic study of thermal reduction of NO₂ by H₂[J]. Journal of Physical Chemistry A,2010,102(49):10099.
27 Byun Y, Ko K B, Cho M, et al. Effect of hydrogen generated by dielectric barrier discharge of NH₃ on selective non-catalytic reduction process[J]. Chemosphere,2009,75:815.
28 Nyman H, Talonen T, Roine A, et al. Statistical approach to quality control of large thermodynamic databass[J]. Metallurgical & Materials Transactions B,2012,43(5):1133.