| INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
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| Research Status and Trends of Ultra-thin Interface Heterogeneous Wafer Bonding Technology |
| WANG Chengjun1,2, YANG Xiaodong2, ZHANG Hui1,*, ZHOU Xingye3, DAI Jiayun4, LI Zaoyang5, DUAN Jinsheng2, QIAO Li2, WANG Guanglai6
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1 School of Mechanical Engineering, Southeast University, Nanjing 211189, China
2 The 2nd Research Institute of China Electronics Technology Group Corporation, Taiyuan 030024, China
3 The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050051, China
4 The 55th Research Institute of China Electronics Technology Group Corporation, Nanjing 210000, China
5 School of Energy and Power Engineering, Xi’an Jiaotong University, Xi’an 710049, China
6 School of Mechanical and Electrical Engineering, Guilin University of Electronic Science and Technology, Guilin 541004, Guangxi, China |
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Abstract The semiconductor industry plays a significance role in national defense security and the economic development of a nation. Advanced semiconductor equipment is the key field for foreign technological restrictions on China. Semiconductor devices used in fields such as radar detection and 5G communication have increasingly high performance requirements for high-power, high-frequency, and high response. Currently, these devices face technical bottlenecks such as high interface thermal resistance, high transmission loss, and low integration. Developing ultra-thin interface heterogeneous wafer bonding equipment to significantly reduce bonding interface thermal resistance and improve interconnect bon-ding accuracy is an important way to solve existing technological bottlenecks and improve device performance. However, due to the foreign monopoly of core components and the difficulty of tackling key equipment technologies, there is currently no mature domestic heterogeneous wafer bonding equipment, which seriously restricts the independent innovation and development of China’s new generation semiconductor devices. This paper summarizes the current research status of ultra-thin interface heterogeneous wafer bonding technology and typical processes, and prospectes the development trend of ultra-thin interface heterogeneous wafer bonding technology.
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Published: 25 December 2024
Online: 2024-12-20
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| Fund:National Key Research and Development Program of China (2022YFB3404300),Basic Scientific Research Projects of the State Administration of Science,Technology and Industry for National Defense (JCKY2019210A002). |
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