AlN/Cu钎焊接头残余应力的数值模拟研究

doi:10.11896/cldb.23030229

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Abstract Aluminum Nitride (AlN) ceramics have been considered as the promising material for packaging high-voltage and high-power insulated gate bipolar transistor (IGBT), where copper (Cu) coating is covered on the AlN ceramic to enhance the heat dissipation. However, the wide discrepancies in physical properties between AlN and Cu often enable severe residual stress after brazing. To address this issue, this study utilizes finite element numerical simulations to investigate the effects of loading, cooling rate, and filler alloy thickness on the residual stress in AlN/Cu brazed joints. The results show that the maximum axial stress in the AlN/Cu brazed joint appears on the AlN ceramic edge adjacent to the brazing filler alloy, while the maximum shear stress is on the interface between the AlN ceramic and brazing filler alloy, where is near the outer edge. Both the maximum axial and shear stresses increase with the decrease in loading, and the increase in cooling rate and filler alloy thickness. The stress distribution remains relatively consistent for all investigated conditions. The obtained results can provide the theoretical guidance for the high-reliability packaging of Cu-coated AlN ceramic substrates in high-power IGBTs.

Key words： insulated gate bipolar transistor (IGBT) AlN/Cu joint brazing numerical simulation residual stress

Published: 25 August 2024 Online: 2024-09-10

CLC number:

V261.3+4

Fund:Key R & D Project in Zhejiang Province (2021C01178), China National Research Project on Magnetic Confinement Fusion Energy Development (2019YFE03100400), National Natural Science Foundation of China(52175368, 52105162, 52005445), Natural Science Foundation of Zhejiang Province(LQ21E050015).

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	Articles by authors
	LYU Chuanyang
	LI Keqiao
	SHENG Jianxiang
	GU Xiaolong
	SHI Lei
	YANG Jianguo
	HE Yanming

Cite this article:

LYU Chuanyang,LI Keqiao,SHENG Jianxiang, et al. Numerical Simulation Study of Residual Stress in AlN/Cu Brazed Joints[J]. Materials Reports, 2024, 38(16): 23030229-9.

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http://www.mater-rep.com/EN/10.11896/cldb.23030229 OR http://www.mater-rep.com/EN/Y2024/V38/I16/23030229

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