溶胶-凝胶法制备Gd4Ga2O9: Dy3+白光发射荧光粉及其性能

doi:10.11896/cldb.22100218

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Abstract Gd₄Ga₂O₉: x%Dy³⁺ phosphors with white light emission were prepared by sol-gel method. The phase structure, morphology, composition and optical properties of the samples were studied by X-ray powder diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectrometry (EDS), UV-Vis diffuse reflectance spectroscopy (UV-Vis DRS), and photoluminescence spectroscopy (PL). The XRD results show that the samples are mixtures of Dy³⁺ doped Gd₄Ga₂O₉ monoclinic crystals and a slight impurity phase corresponding to Ga₂O₃. The results of UV-Vis DRS indicate that the Dy³⁺ doped Gd₄Ga₂O₉ crystal is a direct semiconductor with an optical band gap of 5.29 eV. The PL results reveal that the Dy³⁺ doped Gd₄Ga₂O₉ phosphors can be effectively excited by an excitation band of Gd³⁺ at 275 nm, and emit intense blue and yellow light at 490 nm and 575 nm, which attribute to the ⁴F_9/2→⁶H_15/2 and ⁴F_9/2→⁶H_13/2 transitions of Dy³⁺, respectively, confirming that there is an obvious energy transfer luminescence phenomenon from Gd³⁺ to Dy³⁺ in Gd₄Ga₂O₉: Dy³⁺ samples. The possible luminescence mechanism of Gd₄Ga₂O₉: Dy³⁺ phosphors was briefly proposed. The luminous intensity of the sample varies with the doping amount of Dy³⁺, which also affects the luminous color of the prepared product. The Gd₄Ga₂O₉: 1.5%Dy³⁺ and Gd₄Ga₂O₉: 2.0%Dy³⁺ phosphors can emit white light with CIE color coordinates of (0.336 2, 0.351 2) and (0.338 1, 0.352 3) and correlated color temperatures of 5 340 K and 5 263 K under the excitation of ultraviolet light, respectively. The results imply that Gd₄Ga₂O₉: Dy³⁺ is a potential white light emitting luminescence mate-rial excited by ultraviolet light.

Key words： Gd₄Ga₂O₉ Dy³⁺ doped white light emitting luminescence property energy transfer direct semiconductor

Published: 25 April 2024 Online: 2024-04-28

CLC number:

O611.4

Fund:National Natural Science Foundation of China (213610007, 51776046).

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	Articles by authors
	GUAN Chunyan
	ZHENG Qijing
	WAN Zhenghuan
	YANG Jinyu

Cite this article:

GUAN Chunyan,ZHENG Qijing,WAN Zhenghuan, et al. Preparation and Performance of White Light Emitting Phosphors Gd₄Ga₂O₉: Dy³⁺ by Sol-Gel Method[J]. Materials Reports, 2024, 38(8): 22100218-6.

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http://www.mater-rep.com/EN/10.11896/cldb.22100218 OR http://www.mater-rep.com/EN/Y2024/V38/I8/22100218

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