金属诱导制备纳米晶硅薄膜的研究进展

doi:10.11896/cldb.22050080

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Abstract Nanocrystalline silicon has been widely investigated in the field of photovoltaic and light-emitting semiconductors, due to it's unique quantum confinement effect. Nanocrystalline silicon usually prepared by annealing amorphous silicon under at high temperatures around 1 000 ℃ for several hours. This atmospherically breaks the Si-Si covalent bond and further forms nanocrystalline silicon local nucleation in amorphous silicon. By contrast, the nanocrystalline silicon was prepared by metal-induced method at a lower temperatures nearly 400—600 ℃. The ionic bond between a silicon atom and a metal atom, which provide the nucleation sites for the nc-Si local nucleation in amorphous silicon, and then the crystallization temperature and time of the nanocrystalline silicon are effectively reduced. In this review, the crystallization mechanisms and the crystallization effects of different metals, such as Ni, Al, Cu, Au, Co, Ag-Cu and Ni-Cu alloys, are described in detail and comparatively analyzed. The results can provide useful references for the preparation of nanocrystalline silicon thin films.

Key words： metal induction method amorphous silicon nanocrystalline silicon thin film low temperature induction

Published: 10 November 2023 Online: 2023-11-10

CLC number:

O469

Fund:National Natural Science Foundation of China (12164035, 11964027),Ningxia Natural Science Foundation Project (2022AAC03067), Ningxia Key R & D Program (2018BEE03002),and the Fourth Batch of Ningxia Young Scientific and Technological Talents Lifting Project (TJGC2019002).

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	Articles by authors
	WANG Ning
	MA Xiaobo
	HOU Yi
	ZHENG Fu
	CAO Zhijie

Cite this article:

WANG Ning,MA Xiaobo,HOU Yi, et al. Research Progress on Metal-induced Preparation of Nanocrystalline Silicon Thin Films[J]. Materials Reports, 2023, 37(21): 22050080-7.

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http://www.mater-rep.com/EN/10.11896/cldb.22050080 OR http://www.mater-rep.com/EN/Y2023/V37/I21/22050080

1 Mukhopadhyay S, Chowdhury A, Ray S. Thin Solid Films, 2008, 516(20), 6824.
2 Chen C Z, Fang J W, Lin X Y. Journal of Zhejiang Normal University (Natural Science Edition), 2002, 25(3), 246 (in Chinese).
陈城钊, 方健文, 林璇英. 浙江师范大学学报(自然科学版), 2002, 25(3), 246.
3 Deng Z C, Ma N, Chu L Z, et al. Journal of Hebei University (Natural Science Edition), 2008, 28(6), 592 (in Chinese).
邓泽超, 马娜, 褚立志, 等. 河北大学学报(自然科学版), 2008, 28(6), 592.
4 Liu C Z, Yang B L, Li M J, et al. Chinese Journal of Liquid Crystals and Displays, 2000, 15(1), 46 (in Chinese).
刘传珍, 杨柏梁, 李牧菊, 等. 液晶与显示, 2000, 15(1), 46.
5 Van Gestel D, Gordon I, Poortmans J. Solar Energy Materials and Solar Cells, 2013, 119, 261.
6 Zhao Y, Wang J, Hu Q, et al. Crystal growth, 2010, 312(24), 3599.
7 Oki F, Ogawa Y, Fujiki Y. Japanese Journal of Applied Physics, 1969, 8(8), 1056.
8 Toko K, Kurosawa M, Saitoh N, et al. Applied Physics Letters, 2012, 101(7), 072106.
9 Knaepen W, Gaudet S, Detavernier C, et al. Journal of Applied Physics, 2009, 105(8), 083532.
10 Higashi H, Kudo K, Yamamoto K, et al. Journal of Applied Physics, 2018, 123(21), 215704.
11 Singh C K, Amaladass E P, Parida P K, et al. Applied Surface Science, 2021, 541, 148679.
12 Park J H, Suzuki T, Kurosawa M, et al. Applied Physics Letters, 2013, 103(8), 082102.
13 Sadoh T, Kurosawa M, Hagihara T, et al. Electrochemical and Solid-State Letters, 2011, 14(7), H274.
14 Hekmatshoar B, Mohajerzadeh S, Shahrjerdi D, et al. Applied Physics Letters, 2004, 85(6), 1054.
15 Ko Y D, Kang J G, Lee G H, et al. Nanoscale, 2011, 3(8), 3371.
16 Toko K, Oya N, Saitoh N, et al. Applied Physics Letters, 2015, 106(8), 082109.
17 Bosnell J R, Voisey U C. Thin Solid Films, 1970, 6(3), 161.
18 Herd S R, Chaudhari P, Brodsky M H. Journal of Non-Crystalline Solids, 1972, 7(4), 309.
19 Ottaviani G, Sigurd D, Marrello V, et al. Science, 1973, 180, 948.
20 Sigurd D, Ottaviani G, Arnal H J, et al. Journal of Applied Physics, 1974, 45, 1740
21 Mohiddon M A, Krishna M G, Dalba G, et al. Materials Science and Engineering B, 2012, 177(13), 1108.
22 Gall S, Muske M, Sieber I, et al. Journal of Non-Crystalline Solids, 2002, 299, 741.
23 Xu M, Xia D L, Yang S, et al. Vacuum, 2006, 43(4), 16 (in Chinese).
徐慢, 夏冬林, 杨晟, 等. 真空, 2006, 43(4), 16.
24 Pereira L, Aguas H, Martins R M, et al. Journal of Non-crystalline Solids, 2004, 338, 178.
25 Mengucci P, Barucca G, D'Anna E, et al. Applied Surface Science, 1999, 138, 145.
26 Knaepen W, Detavernier C, Van Meirhaeghe R L, et al. Thin Solid Films, 2008, 516(15), 4946.
27 Parditka B, Zaka H, Erdélyi G, et al. Scripta Materialia, 2018, 149, 36.
28 Matsumura R, Wang Y, Jevasuwan W, et al. Materials Letters, 2019, 252, 100.
29 Shekoofa O, Wang J, Li D, et al. Solar Energy, 2018, 173, 539.
30 Cui D Q. Metal-induced amorphous silicon crystallization of Ni/Si and Cu/Si thin-film systems. Shantou University, 2017 (in Chinese).
崔东庆. Ni/Si和Cu/Si薄膜系统的金属诱导非晶硅晶化研究. 硕士学位论文, 汕头大学, 2017.
31 Xia D L, Yang S, Xu M, et al. Photographic Science and Photochemistry, 2006, 24(2), 87 (in Chinese).
夏冬林, 杨晟, 徐慢, 等. 感光科学与光化学, 2006, 24(2), 87.
32 Wang Z M, Zhang A, Chen Y Y, et al. Acta Metallurgica Sinica, 2020, 56(1), 66 (in Chinese).
王祖敏, 张安, 陈媛媛, 等. 金属学报, 2020, 56(1), 66.
33 Xia D L, Yang S, Zhao X J. Nanotechnology, 2005, 2(5), 384 (in Chinese).
夏冬林, 杨晟, 赵修建. 纳米科技, 2005, 2(5), 384.
34 He D, Wang J Y, Mittemeijer E J. Journal of Applied Physics, 2005, 97(9), 093524.
35 He D, Wang J Y, Mittemeijer E J. Journal of Applied Physics A, 2005, 80(3), 501.
36 Wang J Y, He D, Zhao Y H, et al. Journal of Applied Physics Letters, 2006, 88(6), 061910.
37 Wang J Y, Wang Z M, Mittemeijer E J. Journal of Applied Physics, 2007, 102(11), 113523.
38 Wang Z, Jeurgens L P H, Wang J Y, et al. Advanced Engineering Materials, 2009, 11(3), 131.
39 Wang Z M, Wang J Y, Jeurgens L P H, et al. Physical Review Letters, 2008, 100(12), 125503.
40 Wang Z M, Wang J Y, Jeurgens L P H, et al. Physical Review, 2008, 77(4), 045424.
41 Wang Z M, Wang J Y, Jeurgens L P H, et al. Surface and Interface Analysis, 2008, 40(3-4), 427.
42 Wang Z M, Wang J Y, Jeurgens L P H, et al. Scripta materialia, 2006, 55(11), 987.
43 Wang J Y, Zalar A, Zhao Y H, et al. Thin Solid Films, 2003, 433(1-2), 92.
44 Wang Z M, Gu L, Jeurgens L P H, et al. Journal of Materials science, 2011, 46(12), 4314.
45 Wang Z M, Gu L, Jeurgens L P H, et al. Nano Letters, 2012, 12(12), 6126.
46 Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, et al. Journal of Vacuum Science and Technology A, 2003, 21(3), 752.
47 Sohn D K, Lee J N, Kang S W K S W, et al. Journal of Applied Physics, 1996, 35(2S), 1005.
48 Jin Z, Bhat G A, Yeung M, et al. Journal of Applied Physics, 1998, 84(1), 194.
49 Yoon S Y, Kim K H, Kim C O, et al. Journal of Applied Physics, 1997, 82(11), 5865.
50 Kim K H, Park S J, Kim S H, et al. Journal of Non-Crystalline Solids, 2006, 352(9-20), 976.
51 Jang J, Oh J Y, Kim S K, et al. Nature, 1998, 395(6701), 481.
52 Kurosawa M, Kawabata N, Sadoh T, et al. Applied Physics Letters, 2009, 95(13), 132103.
53 Radnoczi G, Robertsson A, Hentzell H T G, et al. Journal of Applied Physics, 1991, 69(9), 6394.
54 Hultman L, Robertsson A, Hentzell H T G, et al. Journal of Applied Physics, 1987, 62(9), 3647.
55 Aono M, Takahashi M, Takiguchi H, et al. Journal of Non-crystalline solids, 2012, 358(17), 2150.
56 Herd S R, Chaudhari P, Brodsky M H. Journal of Non-Crystalline Solids, 1972, 7(4), 309.
57 Guliants E A, Anderson W A, Guo L P, et al. Thin Solid Films, 2001, 385(1-2), 74.
58 Liu C Z, Yang B L, Li M J, et al. Journal of Natural Science of Jilin University, 2000(3), 45 (in Chinese).
刘传珍, 杨伯梁, 李牧菊, 等. 吉林大学自然科学学报, 2000(3), 45.
59 Feng J Y, He Y, Bi L. Journal of Jiangsu University (Natural Science Eidtion), 2007, 28(2), 123 (in Chinese).
冯嘉猷, 何悦, 毕磊. 江苏大学学报(自然科学版) , 2007, 28(2), 123.
60 Kim H Y, Seok K H, Chae H J, et al. Solid-State Electronics, 2017, 132, 73.
61 Nast O, Wenham S R. Journal of Applied Physics, 2000, 88(1), 124.
62 Wang L Y. Modern Chemical Research, 2020(6), 40 (in Chinese).
王丽云. 当代化工研究, 2020(6), 40 (in Chinese).
63 Kim H, Kim D, Lee G, et al. Solar Energy Materials and Solar Cells, 2002, 74(1-4), 323.
64 Xia D L, Hao J B, Jiang H, et al. Journal of WuHan University of Technology, 2007, 260 (in Chinese).
夏冬林, 郝江波, 姜宏, 等. 武汉理工大学学报, 2007, 29, 260.
65 Gordon I, Carnel L, Van Gestel D, et al. Progress in Photovoltaics:Research and Applications, 2007, 15(7), 575.
66 Parditka B, Verezhak M, Balogh Z, et al. Acta Materialia, 2013, 61(19), 7173.
67 Becker C, Ruske F, Sontheimer T, et al. Journal of Applied Physics, 2009, 106(8), 084506.
68 Zamchiy A O, Baranov E A, Starinskiy S V, et al. Vacuum, 2021, 192, 110462.
69 Lee B J. Journal of Materials Research, 1999, 14(3), 1002.
70 Miura H, Ma E, Thompson C V. Journal of Applied Physics, 1991, 70(8), 4287.
71 Holloway K, Sinclair R, Nathan M. Journal of Vacuum Science & Technology A:Vacuum, Surfaces, and Films, 1989, 7(3), 1479.
72 Nathan M. Journal of Applied Physics, 1988, 63(11), 5534.
73 Shim J Y, Kwak J S, Baik H K. Thin Solid Films, 1996, 288(1-2), 309.
74 Ahn J S, Yoon Y G, Kim D, et al. Thin Solid Films, 2013, 542, 426.
75 Widenborg P I, Aberle A G. Journal of Crystal Growth, 2002, 242(3-4), 270.
76 Kim J C, Choi J H, Kim S S, et al. Applied Physics Letters, 2003, 83(24), 5068.
77 Rehman A U, Lee S H. Materials, 2014, 7(2), 1318.
78 Chen C C, Yang B C, Lee S C. Journal of Vacuum Science and Technology B, 2005, 23(2), 513.