二氧化钒金属-绝缘相变的回线宽度及其调控研究进展

doi:10.11896/cldb.21050100

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Abstract Vanadium dioxide (VO₂) has potential applications in many fields due to its excellent metal-insulator phase transition. The hysteresis width plays an important role in practical applications owing to the fact that different devices require different hysteresis width. For sensor-type devices, a smaller hysteresis width is required in order to run these devices reliably and efficiently. However, for storage-type devices, a relatively larger hysteresis width is required. In order to meet the needs of the different devices, VO₂ has been prepared by magnetron sputtering, sol-gel, polymer-assisted deposition and pulsed laser deposition, and great efforts have been made to investigate the hysteresis width. This article systematically reviews the recent research progress in regulating the hysteresis width of VO₂. Firstly, the influence of the surface morphology (grain size, grain shape and grain boundaries), element doping and preferential orientation on the hysteresis width is summarized. Then, the modulation mechanism of the hysteresis width is discussed. Finally, suggestions as well as perspectives for the future are provided.

Key words： hysteresis width vanadium dioxide metal-insulator phase transition thin film smart window optoelectronic switching optical storage device surface morphology

Published: Online: 2023-03-27

CLC number:

TN213

Fund:National Natural Science Foundation Key Projects (61235006).

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	Articles by authors
	ZHANG Huafu
	ZHOU Aiping
	WU Zhiming
	JIANG Yadong

Cite this article:

ZHANG Huafu,ZHOU Aiping,WU Zhiming, et al. Research Progress on the Hysteresis Width and Its Modulation of Metal-Insulator Phase Transition of Vanadium Dioxide[J]. Materials Reports, 2023, 37(6): 21050100-10.

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http://www.mater-rep.com/EN/10.11896/cldb.21050100 OR http://www.mater-rep.com/EN/Y2023/V37/I6/21050100

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