阴极直接制备铜氧化物-SiO<sub>2</sub>复合薄膜及其电化学形成机理

doi:10.11896/cldb.21030296

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Abstract Composited thin films of copper oxide-silica were electrodeposited directly on an ITO substrate at room temperature using Cu(II)-Cit³^--SiO₂ sol with n_Cu²⁺∶n_Cit^3-of 2∶1 as a electrolyte. Cyclic voltammetry(CV)and X-ray diffraction(XRD)results indicate that Cu₂O-SiO₂ gel films are formed by copper ions co-deposition with SiO₂ sol adsorbed on electrode. The adsorbed amount of SiO₂ sol on the ITO electrode decreased with the increases of overpotentials. XRD and chronoamperometric(CA)results show that the adsorption amount of SiO₂ in the film decreases with the increase of the overpotential. The results of X-ray photoelectron spectroscopy(XPS), XRD and energy dispersive X-ray(EDX)showed that CuO/Cu₂O-SiO₂ films were obtained at higher overpotentials, which was consistent with the results of particles with two different morphologies in the films obtained by scanning electron microscopy(SEM). The CuO/Cu₂O-SiO₂ films are formed by the co-deposition of SiO₂ and Cu(II)with OH generated by hydrogen evolution.

Key words： Cu₂O-SiO₂ CuO/Cu₂O-SiO₂ composite film sol-gel electrochemical formation

Published: 10 March 2023 Online: 2023-03-14

CLC number:

TQ153.1⁺4

Fund:Science and Technology Bureau of Chongqing(cstc2018jcyj-yszxX0005,cstc2020yszx-jcyjX0008).

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	GU Min
	WU Yazhen

Cite this article:

GU Min,WU Yazhen. Direct Electrodeposition and Chemical Formation Mechanism of Copper Oxide-Silica Composite Thin Films[J]. Materials Reports, 2023, 37(5): 21030296-6.

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http://www.mater-rep.com/EN/10.11896/cldb.21030296 OR http://www.mater-rep.com/EN/Y2023/V37/I5/21030296

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