CVD法制备单层二硒化钨薄膜及其生长机制研究

doi:10.11896/cldb.21050222

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Abstract Tungsten diselenide(WSe₂)is a semiconductor material with wide band gap, and its structure is similar to that of graphene. It has potential applications in many fields such as complementary logic circuits, field effect transistors and gas sensors, due to the excellent photoelectric characteristics. In this work, large-area and high-quality monolayer WSe₂ films were prepared by chemical vapor deposition(CVD). The films were characterized by XPS, AFM and Raman. The effects of the distance from substrate to tungsten source and growth temperature on the morphology, size and nucleation density of the samples were investigated. The growth mechanism of WSe₂ films with different morphologies was interpreted by different n(W) ∶n(Se)(≫0.5, >0.5, =0.5)from the perspective of crystal growth, which provided a reference for the optimization of the fabrication process of two-dimensional semiconductor monolayer films.

Key words： tungsten diselenide film chemical vapor deposition transition metal sulfur compound crystal growth

Published: Online: 2023-02-08

CLC number:

O469

Fund:National Natural Science Foundation of China (50901053, 51771139).

Corresponding Authors: spsong@wust.edu.cn

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	Articles by authors
	HU Dongdong
	SONG Shupeng
	LIU Junnan
	BI Jiangyuan
	DING Xing

Cite this article:

HU Dongdong,SONG Shupeng,LIU Junnan, et al. CVD Synthesis and Growth Mechanism Study of Monolayer Tungsten Diselenide Films[J]. Materials Reports, 2023, 37(2): 21050222-6.

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http://www.mater-rep.com/EN/10.11896/cldb.21050222 OR http://www.mater-rep.com/EN/Y2023/V37/I2/21050222

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