INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
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Modulating the Optoelectronic Properties and Stability of Perovskites by Strain Engineering |
WANG Chao, YAN Zhengguang, XIAO Jiawen*
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Beijing Key Lab of Microstructure and Property of Advanced Materials, Institute of Microstructure and Property of Advanced Materials,Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China |
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Abstract Halide perovskite materials have been one of the hottest topics in recent years due to their excellent optoelectronic properties. This upsurge was initially caused by perovskite solar cells, whose power conversion efficiency has exceeded 25% in just a few years. The halide perovskite materials also show huge potential in light-emitting devices, photodetectors, lasers and other optoelectronic devices. The further improvement of perovskite materials and device performance and stability is the key issue of researchers. Various strategies to improve the optoelectronic properties and stability of perovskite materials have also been proposed, such as film crystallization control, interface modification/defect passivation, component engineering, additive engineering, etc. In recent years, strain engineering has been found to be able to effectively improve the optoelectronic properties and device performance of halide perovskites, which provides a novel avenue for the optimization of device performance of perovskite materials. In this review, we start with the basic concept of stress and strain, then describe how to measure and evaluate the residual stress and strain of perovskite materials, as well as how residual stress and strain affect the device performance and the underlying mechanism, and summarize the strategy of applying stress and strain to perovskite material. Finally, the new research perspective of strain engineering to improve the device performance of perovskite materials is prospected.
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Published: 10 September 2022
Online: 2022-09-10
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Fund:National Natural Science Foundation of China (11674015, 21701009) and the Beijing Outstanding Young Scientists Projects (BJJWZYJH01201910005018). |
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