GeTe热电材料的研究和进展

doi:10.11896/cldb.20080307

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Abstract Nowadays, the shortage of fossil energy and environmental pollution are becoming more and more serious, affecting people's daily life and industrial production. Countries around the world are looking for new ways to use energy in a green and efficient way. Among many new technology approaches, thermoelectric conversion technology has attracted more and more attention from industry and academic circles because it can directly convert heat energy into electric energy without producing gas emissions, without producing heat energy in advance, and can ge-nerate electricity only with waste heat from industrial production and daily life. It has been applied in deep space exploration, energy recovery, air conditioning, chip cooling and so on.
Semiconductor GeTe material is a promising medium temperature thermoelectric material. In GeTe, Ge generally cannot fully participate in the reaction, leading to Ge vacancy. One Ge vacancy will generate two holes, holes as carriers to complete conductance and electron thermal conductance, so the thermoelectric performance of GeTe is related to the number of Ge involved in the reaction, and is greatly affected by its preparation process. As Ge could not fully participate in the reaction, a large number of hole carriers were generated, and the high concentration of carriers resulted in high conductivity as well as high electronic thermal conductivity, which limited the thermoelectric application of GeTe. GeTe has complex thermoelectric behavior characteristics due to its narrow band gap and phase transition process. Different element doping and sintering processes have a great impact on the composition, crystal and energy band structure of GeTe and its thermoelectric properties, which provides the possibility to explore appropriate composition, microstructure and preparation technology to improve the thermoelectric optimal value of GeTe based materials. In addition, GeTe based thermoelectric materials also have good mechanical properties, which can meet the requirements of mechanical properties in the application of high-performance thermoelectric devices. These characteristics make GeTe-based alloy become the p-type medium temperature thermoelectric semiconductor material with good performance which has been applied in deep space exploration so far. In this paper, the exploration and research results of improving GeTe thermoelectric properties so far are summarized in detail from the aspects of sintering process, element doping, theoretical calculation and so on, so as to provide reference for the thermoelectric research and application of GeTe.

Key words： thermoelectric materials semiconductor GeTe

Published: Online: 2022-02-10

CLC number:

TN37

Fund:National Key Research and Development Program of China (2017YFF0204706),the Fundamental Research Funds for the Central Universities(FRF-MP-18-005, FRF-MP-19-005) and the Disruptive Innovation Funding Programs(19-163-13-ZT-001-008-19).

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	DONG Yuan
	XU Guiying

Cite this article:

DONG Yuan,XU Guiying. Research and Development of GeTe Thermoelectric Materials[J]. Materials Reports, 2022, 36(3): 20080307-10.

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http://www.mater-rep.com/EN/10.11896/cldb.20080307 OR http://www.mater-rep.com/EN/Y2022/V36/I3/20080307

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